IRGPS60B120KDP

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An IRGPS60B120KDP comprises of a IGBT (Insulated Gate Bipolar Transistor) device in which a normally non-conducting MOSFET is linked in series with a controllable bipolar transistor in order to gain the benefits of both the semiconductor technologies. IGBTs offer the high frequency switching capabilities of MOSFET devices with the low on-state losses of bipoar transistors, making them very appealing in numerous switchmode applications.

In the IRGPS60B120KDP, an IGBT die is mounted on a pressed steel baseplate, and then encased in a steel device package. This structure provides efficient heat conduction while still providing necessary isolation between the device terminals. The package also provides mechanical strength so that the device can handle the operational stresses imposed on it during normal use.

The process used to make the IRGPS60B120KDP starts with the junction between an N+ and P+ layer. The gate is the MOSFET component, and the base layer is connected to the collector and the P+ layer to the emitter. The device is then passivated, or coated with an insulating oxide, such as silicon dioxide, and then connected to metal bonds on the package.

The IGBT structure has a number of interesting properties, which make it useful in many applications. Firstly, the IGBT has a fast switching action with a low turn-on voltage and excellent energy efficiency. Its turn-on and turn-off is also very fast, with no variation in switching speed in the high frequency spectrum. Moreover, the IGBT has a low forward voltage drop and a high input impedance. Due to the use of reverse recovery diodes, their reverse recovery characteristics are superior, making them more reliable than other power transistors.

The IRGPS60B120KDP has a range of applications, from power management like motor control, DC-DC converters, switched mode power supplies and motor drive inverters to other industrial applications such as heating control, lighting, welding and uninterruptible power supplies, as well as aerospace, automotive, and home appliance applications.

In addition to its fast switching action, the IRGPS60B120KDP also boasts a high current and power handling capability. It can handle up to 30A peak and is rated for continuous current of up to 15A. This makes it suitable for medium and high voltage applications, as well as applications requiring maximum power dissipation.

As mentioned earlier, the IRGPS60B120KDP is a single IGBT device, incorporating MOSFET and bipolar technologies in one package. The base of the device is connected to the collector, which is commonly connected to the load. The gate of the device is then connected to a voltage source and when the voltage is applied to the gate, the device turns on and allowing current to flow between the collector and the emitter. This process is reversed when the voltage is removed and the device turns off, thus blocking the conduction between the collector and the emitter.

In conclusion, the IRGPS60B120KDP is a single IGBT tailor-made for switch mode applications and other high frequency applications. Due to its fast switching action, excellent energy efficiency and high current and power handling capability, it is used in a variety of applications including power management, industrial applications and automotive applications. Moreover, its simple operation in switching between the collector and emitter makes it easy to use and maintain.

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