IRLHS6276TR2PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRLHS6276TR2PBF is a MOSFET manufactured by Infineon Technologies, designed for use in power management applications. The part is a dual N-Channel power MOSFET, featuring 8 pins and an RDS(on) of 4.1mΩ. Its maximum drain current is 76A, and it operates at a maximum drain-source voltage of 55V. It is suitable for use in a variety of power management applications such as lighting, power regulation, voltage monitoring and over-voltage protection.

The IRLHS6276TR2PBF is a full-featured array of N-channel Power MOSFETs, with each device being independent of the others. Each device is completely independent and is able to operate up to its full rated specifications without any interaction from the other devices in the package. Each N-Channel MOSFET is designed for use in power management applications, such as lighting, power regulation, voltage monitoring and over-voltage protection.

The working principle of the IRLHS6276TR2PBF is based on its N-channel MOSFET construction. It is an enhancement-mode MOSFET, meaning that it requires a voltage higher than the gate-source voltage to "turn on" and allow current flow. It is able to control the drain-source current, by controlling the voltage between its gate and source terminals. The IRLHS6276TR2PBF is designed to operate in a fully enhancement mode, meaning it will turn on when the gate-source voltage is higher than the threshold voltage, and it will turn off when the voltage is lower than the threshold voltage.

The IRLHS6276TR2PBF is also capable of operating in a linear mode, which is controlled by an external resistor connected between the gate and source terminals. This resistor increases the gate-source voltage, which in turn increases the drain-source current. This is useful in applications where the current needs to be regulated in a very specific manner.

In addition, the IRLHS6276TR2PBF has an integrated internal diode which acts as a reverse polarity protector. This diode protects against damage from over-voltages and current surges, by providing an alternative path for any excess current.

Overall, the IRLHS6276TR2PBF is an advanced array of N-channel Power MOSFETs, designed for use in a variety of power management applications. It is capable of sourcing large-amounts of current in a very efficient manner and is protected against over-voltages and current surges. Due to its small size and high-performance, it is suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference