Allicdata Part #: | IRLHS6376TR2PBFCT-ND |
Manufacturer Part#: |
IRLHS6376TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET 2N-CH 30V 3.6A PQFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 3.6A 1.5W Surf... |
DataSheet: | IRLHS6376TR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.1V @ 10µA |
Base Part Number: | IRLHS6376 |
Supplier Device Package: | 6-PQFN (2x2) |
Package / Case: | 6-VDFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.5W |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 63 mOhm @ 3.4A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The IRLHS6376TR2PBF is a MOSFET that belongs in the Arrays family of any classification of Transistors – FETs, MOSFETs. This particular type of MOSFET, when compared to standard MOSFETs, comes with an integrated array of several power cells; these cells are connected in parallel in order to pull maximum current when switched on. As such, it enables designers to achieve high current levels without overheating or energy losses.
The primary application of IRLHS6376TR2PBF is in the automotive and industrial sectors. It is used to power high-demanding applications, such as DC motors and HVAC systems, owing to its outstanding power performance characteristics. With its integrated SuperMESH (TM) technology, it has circuit characteristics that minimize switching losses and improves bidirectional conduction. It also comes with very low power losses for more efficient system operation.
In order to better understand how and why the IRLHS6376TR2PBF functions, it is necessary to first understand its working principle. This particular MOSFET is designed around the principle of gate-source voltage (VGS) control and operates in an ‘on’ or ‘off’ format. When the gate voltage is below the threshold voltage, the device is in its ‘off’ state, which means that no current can pass through it. However, when the gate voltage reaches and surpasses the threshold voltage, it goes into its ‘on’ state and allows current to pass through. This device, thanks to its SuperMESH (TM) technology, makes the device suitable for high speed switching due to the low charge transfer during the switching process.
To conclude, the IRLHS6376TR2PBF is a MOSFET array intended for industrial and automotive applications and it is designed to pump maximum current when switched on. This is made possible through its SuperMESH (TM) Technology, which works on the principle of gate-source voltage control. In its ‘off’ state, no current can pass through, but once the gate voltage surpasses a certain threshold, the device enters its ‘on’ state, allowing for current to flow freely. Through this technology, IRLHS6376TR2PBF excels in producing high current levels without the risk of overheating or energy losses.
The specific data is subject to PDF, and the above content is for reference
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