Allicdata Part #: | IRLHM620TRPBFTR-ND |
Manufacturer Part#: |
IRLHM620TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 26A PQFN |
More Detail: | N-Channel 20V 26A (Ta), 40A (Tc) 2.7W (Ta), 37W (T... |
DataSheet: | IRLHM620TRPBF Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 1.1V @ 50µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PQFN (3x3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3620pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 20A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRLHM620TRPBF is a MOSFET (metal-oxide-semiconductor field-effect transistor) integrated circuit (IC) manufactured by International Rectifier, a company based in El Segundo, California. It is a single-channel, enhanced, high-speed, advanced power MOSFET. This MOSFET comes in a standard 8-pin dual in-line package (DIP) and has a maximum current rating of 10 A, enabling it to handle higher current and voltages than competing devices. IRLHM620TRPBF has low gate-charge, low on-resistance, high reliability and significantly reduced switching losses, making it an ideal choice for power control applications.
The IRLHM620TRPBF has an operating voltage range of -35V to +100V and can handle continuous drain currents of up to 10 A. It has a gate-source breakdown voltage of 7 V, making it suitable for switching high voltage signals. It also has a maximum power dissipation of 300 mW and can handle up to a 2-ns switching speed. It also has a thermal resistance of 175°C/W, allowing it to operate reliably over a wide range of temperatures.
The IRLHM620TRPBF is typically used in power control applications, such as motor control, industrial inverters, switch mode power supplies, and general purpose switching applications. It is also suitable for use in applications where high reliability and power efficiency are required. This device has proven to be reliable and robust in demanding applications, such as motor control and inverters, due to its low gate-charge, low on-resistance, and high thermal resistance.
The working principle of IRLHM620TRPBF is based on the principle of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors). A MOSFET is a type of transistor which controls electric current by using an electric field. The MOSFET works by utilizing the phenomenon in which applying a voltage to a gate creates an electric field, resulting in a change in the transistor\'s conductivity as a result of electric field interaction. This phenomenon is known as the MOSFET effect. In the case of the IRLHM620TRPBF, when an electric field is applied to its gate, it changes the conductivity of the transistor, allowing current to flow through the device.
The IRLHM620TRPBF is used in a wide variety of applications, ranging from motor control, switching mode power supplies, industrial inverters and general purpose switching applications. Its low gate-charge, low on-resistance, high reliability and significantly reduced switching losses make it an ideal choice for power control applications.
The specific data is subject to PDF, and the above content is for reference
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