IRLHS6242TR2PBF Discrete Semiconductor Products |
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Allicdata Part #: | IRLHS6242TR2PBFCT-ND |
Manufacturer Part#: |
IRLHS6242TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 10A PQFN |
More Detail: | N-Channel 20V 10A (Ta), 12A (Tc) 1.98W (Ta), 9.6W ... |
DataSheet: | IRLHS6242TR2PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.1V @ 10µA |
Package / Case: | 6-PowerVDFN |
Supplier Device Package: | 6-PQFN (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.98W (Ta), 9.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 11.7 mOhm @ 8.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 12A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The IRLHS6242TR2PBF, also known as a FET, is a type of semiconductor typically used in ultra-high voltage switching applications. It is a key component in the production of effective and reliable power supply, designed to reduce losses and simplify the design of power delivery systems, often utilized in industrial situations. FETs have a wide range of applications, however, being one of the single type, it has a number of unique features and characteristics.
The IRLHS6242TR2PBF has a Vdss of 60Volts with a continuous drain current of 36A and a drain-source breakdown voltage of 55Volts with a maximum power dissipation of 180W. It is compatible with most mechanical and electrical components, features a wide temperature range, and operates within a wide temperature range too. In addition, the IRLHS6242TR2PBF offers good static and dynamic parameters for reliable switching performance, meaning it is ideal for switching applications requiring high performance and reliability.
The working principle behind the IRLHS6242TR2PBF is based on the relationship between drain current and drain-source voltage. The device operates in three different modes depending upon the state of an externally applied gate voltage: cut-off, linear, and saturation. When a sufficiently high gate voltage is applied, the field-effect transistor is said to be in saturation because of the low current flowing through it. When the gate voltage is reduced, the current decreases, resulting in the transistor entering the linear mode. In this state, the output current increases or decreases linearly as the voltage is varied. Finally, when the gate voltage is reduced further, the transistor enters the cut-off state, where the current is practically zero.
Although the IRLHS6242TR2PBF is primarily designed for switching applications, it can also be used in a variety of other areas, including motor control, power switching circuits, high speed switching, and all other types of high frequency switches. Its characteristics, along with its wide temperature range, make it an ideal device for a broad range of applications, including demanding conditions and applications where performance needs to be optimized.
The IRLHS6242TR2PBF is an excellent choice for industrial applications requiring a reliable and efficient power supply. With its wide temperature range, low power consumption, and high-performing static and dynamic parameters, it is ideally suited for demanding environments and applications that require maximum performance and reliability. It is an important component for producing superior and efficient power supply and switching applications.
The specific data is subject to PDF, and the above content is for reference
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