IRLHS2242TRPBF

Vgs(th) (Max) @ Id:	1.1V @ 10µA
Package / Case:	6-PowerVDFN
Supplier Device Package:	6-PQFN (2x2)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.1W (Ta), 9.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	877pF @ 10V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	31 mOhm @ 8.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Ta), 15A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRLHS2242TRPBF is an N-channel Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with a maximum drain-source voltage of 20 V. It has a channel width of 3.2 mm, an on-state resistance of 2.4 Ω, an off-charge gate leakage current of 6 nA and a maximum drain current of 13 A. The IRLHS2242TRPBF is designed to be used in a wide variety of applications, including switching, high-frequency amplification, and audio and video signals. It is also a suitable selection for your design needs when engineering high-power systems where energy savings and low on-resistance are key benefits. In this article, we will discuss the application fields and working principles of the IRLHS2242TRPBF.

Application Fields

The IRLHS2242TRPBF is well suited for a variety of applications, including switching, high-frequency amplification, and audio and video signals. It can be used in electronic motor control systems such as variable speed drives, inverters, and servo systems. The IRLHS2242TRPBF can be used in high-power systems where energy savings and low on-resistance are key benefits. It is also used in automotive and transportation applications, including engine management systems, glow systems, and battery management systems. It is suitable for applications requiring high current and low voltage, such as DC/DC converters, power supplies, and power supplies.

Working Principle

The IRLHS2242TRPBF is a N-channel Power MOSFET, which means it has two layers of doped semiconductor material. The two layers are the source and the drain, which are connected via an insulated gate. The gate is placed between the source and drain and can be controlled by an external voltage. When the voltage is applied to the gate, it creates an inversion layer between the source and drain. This inversion layer increases the conductivity between the source and drain and allows current to flow through the MOSFET. As the voltage increases, the conductivity increases, allowing more current to flow. When the voltage is reduced, the conductivity decreases, which reduces the current flow. The IRLHS2242TRPBF also has an on-state resistance, meaning that even at a low voltage, some current will still flow through the device. The on-state resistance also serves as an indicator of the device’s overall performance. A low on-state resistance indicates a good performance while a higher resistance indicates that the performance could be improved. The IRLHS2242TRPBF is a great choice for a variety of applications that require efficient control of current flow. Its low on-state resistance enables cost-effective solutions for many applications. In addition, the device can easily be controlled by an external voltage source, making it a great choice for a variety of applications.

Conclusion

In conclusion, the IRLHS2242TRPBF is a great choice for a variety of applications, including switching, high-frequency amplification, and audio and video signals. It is well suited for energy savings and low on-resistance applications. The device has two layers of doped semiconductor material, the source and the drain, which are separated by an insulated gate. By applying a voltage to the gate, an inversion layer is created between the source and the drain, allowing current to flow. The IRLHS2242TRPBF also has an on-state resistance, enabling efficient control of current flow in order to achieve cost-effective solutions.

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