Allicdata Part #: | IRLHM620TR2PBFCT-ND |
Manufacturer Part#: |
IRLHM620TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 26A PQFN |
More Detail: | N-Channel 20V 26A (Ta), 40A (Tc) 2.7W (Ta), 37W (T... |
DataSheet: | IRLHM620TR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.1V @ 50µA |
Package / Case: | 8-VQFN Exposed Pad |
Supplier Device Package: | PQFN (3x3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta), 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3620pF @ 10V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.5 mOhm @ 20A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta), 40A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The IRLHM620TR2PBF is a highly efficient, commonly used MOSFET device due to its high current density and low cost. It is widely used in many applications, ranging from power management, to motor control, and to signal conditioning, which makes it extremely versatile.
The IRLHM620TR2PBF is a three terminal, normally-off MOSFET that operates from an operating voltage of 5V. It has a very low input and output capacitance and provides gate-source tracking protection, which allows it to be used for high-frequency, low-power applications. The IRLHM620TR2PBF can handle peak currents up to 120A and has a maximum drain-source breakdown voltage of up to 620V with a maximum drain-source on-state resistance of 5.4Ω.
The IRLHM620TR2PBF is based on a MOSFET operating principle, specifically an insulated gate field-effect transistor (IGFET). It uses an insulated gate electrode to control the current flow between the drain and source terminals. When the voltage of the gate terminal is low, a reverse part of the drain-source region is connected, resulting in current blockage between the drain and source due to the gate being in a high impedance state. However, when the gate voltage increases, the reverse part of the drain-source region becomes conductive, resulting in current flow between the drain and source, as the gate is now in a low impedance state.
The IRLHM620TR2PBF is typically used in high frequency switch-mode applications, such as off-line converters, automotive alternators and DC-DC converters that require high frequency switch-mode conversion and power management of high levels of current. It is also well-suited for motor control applications as it can handle peak currents of up to 120A.
The IRLHM620TR2PBF is designed to be very reliable at high temperatures with its maximum operating junction temperature of 175°C, meaning it can be used in applications that require higher temperatures. It also offers very high surge current capability and due to its low threshold voltage it has low power consumption.
In summary, the IRLHM620TR2PBF is a great multi-purpose MOSFET that is ideal for a variety of high frequency switch-mode applications, such as power management, motor control, and signal conditioning. With its low input and output capacitance and ability to handle peak currents of up to 120A, it is capable of meeting the demands of most applications.
The specific data is subject to PDF, and the above content is for reference
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