Allicdata Part #: | IRLH5036TR2PBFCT-ND |
Manufacturer Part#: |
IRLH5036TR2PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 100A 5X6 PQFN |
More Detail: | N-Channel 60V 20A (Ta), 100A (Tc) 3.6W (Ta), 160W ... |
DataSheet: | IRLH5036TR2PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.5V @ 150µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 160W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5360pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 90nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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IRLH5036TR2PBF is a Power MOSFET, which belongs to the category of transistors, FETs and MOSFETs. This type of device is used for high voltage and high current operations. It is a single transistor which is ideal for applications such as power controlling, power conversion, and other energy management operations.
The IRLH5036TR2PBF is specially designed for high voltage applications and can handle peak voltages ranging from -100v to +100v. It has an R DS on of 8Ω at 10v and its Gate-Source voltage is rated up to +20v. This device has a low thermal resistance of 13°C/W. It also has a low gate charge, making it suitable for fast switching operations. The IRLH5036TR2PBF has an exceptionally low on-resistance making it extremely efficient.
More specifically, the IRLH5036TR2PBF has a gate turn-on voltage of +2.0V and gate turn-off voltage of 25v. Its drain-source breakdown voltage is rated up to 100V and its drain-source on resistance is rated up to 8Ω at 10V. The maximum drain current for this transistor is 72A and the maximum power dissipation is rated to be 354W. In terms of gate charge, this device has a gate charge of 17nC and a threshold voltage of 0.6V.
As for the working principle, the IRLH5036TR2PBF uses the gate to regulate the current flow through the channel of the transistor. When the gate voltage is applied, the channel between the source and drain will be formed and current will be able to flow through it. The device operates in two modes namely, Enhancement Mode and Depletion Mode. Enhancement mode allows the device to turn on when a voltage is applied to the gate while depletion mode allows the device to turn off when a voltage is applied. This gives the device flexibility in terms of control and operation.
The IRLH5036TR2PBF can be used in a variety of applications, the most common being power controlling, power conversion and energy management. These devices are suitable for these applications as they have low thermal resistance, high current ratings, and low gate charge. This makes them perfect for use in high voltage and high current operations. Other applications include high voltage switches, DC to DC converters, and high speed switching.
To sum up, the IRLH5036TR2PBF is a Power MOSFET which falls under the transistors, FETs and MOSFETs category. It is designed for high voltage and high current operations and has a variety of applications such as power controlling, power conversion, and other energy management operations. The working principle involves the use of the gate to regulate the current flow through the channel between the source and drain. The IRLH5036TR2PBF is a highly efficient device with low thermal resistance, high current ratings and low gate charge making it perfect for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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