IRLHS2242TR2PBF Allicdata Electronics
Allicdata Part #:

IRLHS2242TR2PBFCT-ND

Manufacturer Part#:

IRLHS2242TR2PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 5.8A 2X2 PQFN
More Detail: P-Channel 20V 7.2A (Ta), 15A (Tc) 2.1W (Ta), 9.6W ...
DataSheet: IRLHS2242TR2PBF datasheetIRLHS2242TR2PBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Package / Case: 6-PowerVDFN
Supplier Device Package: 6-PQFN (2x2)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 9.6W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 31 mOhm @ 8.5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Cut Tape (CT) 
Description

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IRLHS2242TR2PBF is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It can be used in many different applications, including power management, motor control, switching regulators, and more. The IRLHS2242TR2PBF is a popular MOSFET because of its low on-resistance and high leakage current. This makes it suitable for applications where power efficiency is important.

A MOSFET is a type of transistor that controls the flow of electrical current with an electric field. It consists of two main components, the gate and the drain-source channel. The gate is responsible for controlling the flow of current, while the drain-source channel allows current to flow between the drain and source when the gate is energized, or “turned on.” When the gate is not energized, or “turned off”, it prevents current from flowing from the drain to the source.

The IRLHS2242TR2PBF uses a low impedance channel (low Rds(on)) to reduce power dissipation and increase efficiency. Its gate provides an easy and fast switching speed, making it an ideal choice for high frequency circuits. Additionally, the device offers a number of other features that make it especially useful in power management applications. These features include low total gate charge, low gate input capacitance, and low output capacitance. All of these features make the IRLHS2242TR2PBF a great choice when power efficiency is a priority.

The IRLHS2242TR2PBF is a versatile transistor that is ideal for use in a variety of applications. It is well suited for switching regulators, DC-to-DC converters, low side switching applications, and motor control. It is also suitable for logic level high side switching applications which require very high transconductance and a low on-resistance. The device can handle up to 40A of continuous drain current, making it ideal for applications where high currents are needed. In addition, the device offers excellent voltage handling capabilities of up to 12V, making it a great choice for applications where high voltage operation is needed.

In addition to its excellent performance, the IRLHS2242TR2PBF is highly efficient, making it a great choice for power management applications. The device has a low current leakage, which helps to reduce power dissipation and improve efficiency. Additionally, the device’s low switching frequency helps to extend battery life in battery-powered applications. Finally, the device is RoHS (Restriction of Hazardous Substances) and halogen-free, meaning it is compliant with environmental regulations.

Overall, the IRLHS2242TR2PBF is a great choice for a wide range of applications. Its low Rds(on), low current leakage, and excellent voltage handling capabilities make it an ideal choice for power management applications, while its high frequency switching capabilities make it well suited for switching regulators, DC-to-DC converters, and motor control. It is also RoHS and halogen-free, making it an environmentally friendly choice. Finally, its low total gate charge and gate input capacitance make it suitable for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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