IRLH7134TR2PBF

Vgs(th) (Max) @ Id:	2.5V @ 100µA
Package / Case:	8-PowerTDFN
Supplier Device Package:	8-PQFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.6W (Ta), 104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3720pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	58nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	3.3 mOhm @ 50A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	26A (Ta), 85A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

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Introduction

The IRLH7134TR2PBF is a type of MOSFET (metal-oxide semiconductor field-effect transistor) created for use in a variety of applications. The device is a part of the IRLM series of MOSFETs and is also known as an enhancement mode MOSFET. The device contains 2 different MOSFETs in a single package, each of which serves a different purpose. IRLH7134TR2PBF is a dual N-channel power MOSFET.

Features

The IRLH7134TR2PBF is designed to meet a wide range of power requirements and offers a range of features that make it a popular choice for engineers. The device is constructed out of silicon and has a Pb−Free plating for improved reliability and durability. The device requires only 1.8V gate drive to switch from the on to off state, making it ideal for applications that require low power consumption. The device also features a low gate charge, a low on-state resistance, an ultrafast switching speed of less than 7 microseconds and a drain-source voltage of 60V.

Applications

The IRLH7134TR2PBF is designed for use in a range of applications, including DC/DC converters, high-side switches, logic level switching and load switching. It is also an important component in battery protection systems designed to keep portable electronics safe from damage during discharge and recharge cycles. The device is also suitable for a wide range of consumer electronics, including audio amplifiers, portable speakers, LED lighting and LED drivers.

Working Principle

The IRLH7134TR2PBF works on the principle of a MOSFET. A MOSFET is a transistor that uses voltage to control the flow of electrical current. The IRLH7134TR2PBF MOSFET is an enhancement type MOSFET, meaning that it can only be switched from ON to OFF when an additional voltage, or “gate voltage”, is applied. When the gate voltage is applied, a conducting pathway between the drain and source terminals is opened, allowing current to flow. The device can then be switched off by removing the gate voltage. This makes it ideal for applications that require low power consumption and fast switching speeds.

Conclusion

The IRLH7134TR2PBF is a dual N-channel MOSFET designed for use in a variety of applications. It features a low gate charge, low on-state resistance and an ultrafast switching speed of less than 7 microseconds. The device is suitable for applications such as DC/DC converters, high-side switches, logic level switching and load switching. It is also an important component in battery protection systems designed to keep portable electronics safe from damage during discharge and recharge cycles. The IRLH7134TR2PBF is a reliable, efficient and cost-effective solution for applications that need fast, low-power switching.

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