Allicdata Part #: | IRLH5034TRPBFTR-ND |
Manufacturer Part#: |
IRLH5034TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 40V 100A 8-PQFN |
More Detail: | N-Channel 40V 29A (Ta), 100A (Tc) 3.6W (Ta), 156W ... |
DataSheet: | IRLH5034TRPBF Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 2.5V @ 150µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PQFN (5x6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.6W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4730pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 29A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRLH5034TRPBF is an advanced, high-power MOSFET manufactured by International Rectifier, specifically designed for use in power conversion systems. It has high current handling capability, low gate-source capacitance, and low gate-source resistance. This makes it ideal for use in applications where power efficiency and performance are critical. The IRLH5034TRPBF is the latest in a series of high-power, low on-resistance MOSFETs from International Rectifier.
The IRLH5034TRPBF can be used in a variety of applications, including, but not limited to, high-current motor drives, switched-mode power supplies, solar inverters and other related applications. In addition, the IRLH5034TRPBF can be used for synchronous buck and boost converters, high-frequency inverters and power factor correction applications. The device has a drain-source breakdown voltage of 50V and a continuous drain current rating of 34A. The on-resistance of this MOSFET is exceptionally low, making it ideal for high efficiency applications.
The IRLH5034TRPBF has a robust body construction and a Pb-free package that ensures high reliability and long device life. This makes it suitable for use in high-temperature, high-vibration environments, such as those encountered in motor drives. The device also has thermal stability with a low gate charge, meaning that it can be used in applications where fast switching speeds are required.
The working principle of the IRLH5034TRPBF is based on the MOSFET principle. In this type of device, the gate-source voltage is used to modulate the drain-source current. When the gate-source voltage is above the threshold voltage, the device conducts and then the drain-source current increases. When the gate-source voltage is below the threshold voltage, the device is off and the drain-source current reduces to zero. This type of device is ideal for power conversion systems because of its low on-resistance, high current handling capabilities and low gate-source capacitance.
In addition to its application field, the IRLH5034TRPBF also offers a range of advantages in terms of performance, such as its low on-resistance, low gate-source capacitance and high-current handling capabilities. Its body construction ensures high reliability and extended device life, making it suitable for applications in harsh thermal environments and high-vibration applications. The device is available in a Pb-free package, ensuring compliance with current RoHS standards.
In conclusion, the IRLH5034TRPBF is an advanced, high-power MOSFET manufactured by International Rectifier, specifically designed for use in power conversion systems. Its high current handling capability, low gate-source capacitance, and low gate-source resistance make it ideal for use in applications where power efficiency and performance are critical. Its robust body construction and Pb-free package ensure high reliability and extended device life, while its thermal stability makes it suitable for applications where fast switching speeds are required.
The specific data is subject to PDF, and the above content is for reference
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