IRLH5030TR2PBF Discrete Semiconductor Products

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IRLH5030TR2PBF is a type of single-die, n-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies AG. This power MOSFET basically consists of an insulated-gate field-effect transistor, a few onto which, a special ultrathin silicon dioxide layer is applied in order to form an oxide-semiconductor interface. The oxide-semiconductor interface is formed by subjecting the silicon dioxide layer to a high DOS (Density of States) process.A new level of utility and efficiency is provided by IRLH5030TR2PBF by allowing power MOSFETs to be used in switched-mode power supplies, and automotive systems in increased power levels and reduced gate drive requirements. This MOSFET provides high input impedance, low output impedance and a high linearity, providing a stable platform for applications in low-voltage circuitry.IRLH5030TR2PBF has also gained popularity in high-performance electronics like computers, portable audio equipment and other analog circuits, which require high switching performance. It is also ideal for use in portable electronic devices such as notebooks, digital cameras and mobile phones. Its SIPMOS(TM) process utilizes thinner gate oxide for improved switching performance and lower gate charge, which adds to the MOSFET’s effectiveness.IRLH5030TR2PBF is usually employed in such applications as producing analogue audio output stages, controlling the output voltage and current of switching regulators, high-speed switching, pulse motors, amplifiers, and DC/DC converters.Since IRLH5030TR2PBF is a N-channel MOSFET, the drain terminal is connected to the positive power supply, and the source terminal is connected to the negative power supply. When the gate voltage is low, the IRLH5030TR2PBF is essentially off. When the gate voltage rises, the impedance between the drain and source terminals decreases, thus allowing current to flow through the MOSFET. The magnitude of drain current can be controlled by adjusting the gate voltage.IRLH5030TR2PBF also provides a fast switching time and low Rdson (Rds on resistance), which makes it suitable for high frequency applications. Moreover, this MOSFET has a gate-source breakdown voltage of -20V, making it suitable for applications that require higher voltage levels.It also offers very low gate charge due to its low input capacitance, as well as a wide range temperature range operating temperature of -55°C to +150°C. Moreover, the IRLH5030TR2PBF is available in a small SOT-223 package, making it ideal for use in a variety of applications due to its low power consumption and environmentally friendly sound level.

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