IXGR40N60C Allicdata Electronics
Allicdata Part #:

IXGR40N60C-ND

Manufacturer Part#:

IXGR40N60C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 200W ISOPLUS247
More Detail: IGBT 600V 75A 200W Through Hole ISOPLUS247™
DataSheet: IXGR40N60C datasheetIXGR40N60C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 850µJ (off)
Base Part Number: IXG*40N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 480V, 40A, 4.7 Ohm, 15V
Td (on/off) @ 25°C: 25ns/100ns
Gate Charge: 116nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 200W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Current - Collector Pulsed (Icm): 150A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IGBTs, short for Integrated Gate Bipolar Transistors, are mainly used in motor control systems. They are voltage-controlled semiconductor amplifiers commonly used to switch electrical power efficiently in solenoid, stepper motor, motor drive, and motor control systems. IXGR40N60C is a type of IGBTs specifically designed to provide superior performance in a wide range of applications with low gate drive power.

IXGR40N60C has excellent electrical characteristics such as low on-resistance and low gate-charge. The on-resistance of the device is very low, which enables it to work efficiently even at high temperatures. Furthermore, the gate-charge has a low switching time and high current capability, which makes the device suitable for a wide range of applications.

The main application of IXGR40N60C is as an amplifier for power-switching applications. The low gate-charge of the device allows it to be used in high-frequency switching applications, such as in switch-mode power supplies and high-efficiency, high-power motor drives. Furthermore, the low on-resistance of the device makes it an excellent choice for motor drives and other power conversion applications.

The working principle of IXGR40N60C is based on the process of providing a flow of electrons (also called current) through a semiconductor material. The electrons are supplied to the device by a current source, and they flow through the material to an electrical load. The flow of electrons is controlled by the gate of the device, which is connected to an external power supply. When the gate is opened, the electrons will flow through the semiconductor material to the electrical load. When the gate is closed, the electrons will be prevented from flowing through the material. This gate control allows the device to be used to convert electrical energy from one form to another.

In summary, IXGR40N60C is a type of IGBTs specifically designed for superior performance in a wide range of applications with low gate drive power. The device has excellent electrical characteristics such as low on-resistance and low gate-charge, which makes it suitable for high-frequency switching applications such as motor drive, power conversion, and high-efficiency power switch. The working principle of IXGR40N60C is based on providing a flow of electrons through a semiconductor material, which is controlled by the gate of the device.

The specific data is subject to PDF, and the above content is for reference

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