IXKP10N60C5

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The IXKP10N60C5 is a field effect transistor (FET) manufactured by IXYS Corporation, a semiconductor company specializing in power management and power control technologies. It is a MOSFET, a type of FET. It is a single package, meaning that the two terminals, the drain and the source, are in the same package.

A FET is an electrically operated switch that is used in many electronic circuits and devices. A MOSFET differs from other types of FET’s in that it uses an oxide as its gate insulation. This provides for a lower input voltage than other FETs, and better control over the switching threshold.

The IXKP10N60C5 is a high speed, power MOSFET, designed for use in switching circuits, voltage and current control and battery chargers. Its high current handling capacity and low on resistance make it suitable for power conversion applications. It also has a low switching threshold which is suitable for low power applications like providing logic level control for very low current circuits.

This particular MOSFET also has built-in protection against input over-voltage and reverse current, as well as thermal shutdown protection. It has a maximum drain-source voltage of 600V, a drain current of 10A and a power dissipation of 12W. It is also fast switching, with a turn-on and turn-off time of 48ns and 46ns respectively.

In general, a circuit using the IXKP10N60C5 will contain a DC power supply, the IXKP10N60C5 MOSFET, a current sense resistor, and a current sense amplifier. When the voltage difference between the drain and source terminals is greater than the threshold voltage, the MOSFET will turn ON. This will cause current to flow and generate a voltage across the current sense resistor. This voltage is amplified by the current sense amplifier and can then be used to control the load current.

Using the IXKP10N60C5, a DC power supply with a regulated output voltage, and a load switching circuit, it is possible to create a voltage regulator. In this circuit, the IXKP10N60C5 will be used to switch the load on or off in order to maintain a constant regulated voltage at the output. To achieve this, the voltage at the drain terminal of the MOSFET is monitored, and a control circuit will vary the drain-source voltage so that the desired regulated output voltage is reached.

The IXKP10N60C5 is also used for frequency modulation in radio transmitters and receivers. In this application, the MOSFET switches between the drain and source with a particular frequency and amplitude, thus modulating the radio signal. The MOSFET allows for an extremely fast switching speed, ensuring that the signal is modulated accurately and with minimal distortion.

In conclusion, the IXKP10N60C5 is a rugged and reliable MOSFET, suitable for a variety of applications such as voltage regulation, current control, and frequency modulation. It has low on resistance and a high current handling capability, making it ideal for power management and control applications. The built-in protection features make it a safe and reliable choice.

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