| Allicdata Part #: | IXKP13N60C5M-ND |
| Manufacturer Part#: |
IXKP13N60C5M |
| Price: | $ 2.35 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 6.5A TO220FP |
| More Detail: | N-Channel 600V 6.5A (Tc) Through Hole TO-220ABFP |
| DataSheet: |  IXKP13N60C5M Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 2.11919 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 440µA |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Supplier Device Package: | TO-220ABFP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 6.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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IXKP13N60C5M is an insulated gate bipolar transistor (IGBT) in the seventh generation (Gen7) IGBT family. It is used in various applications in power systems. This article will discuss its application field and working principle.Application fieldThis IGBT device is a switch mode device which operates in either the on or off mode. It is used extensively in both power conversion and motor control applications for controlling the flow of power to electrical devices. It also finds use in systems such as consumer electronics and renewable energy sources. IXKP13N60C5M is especially suited for applications operating at medium voltage ranging from 600V to 1200V.Working principleThe IGBT device is structured as a combination of an insulated-gate bipolar transistor (IGBT) and a parasitic diode. When the gate voltage is below the breakover voltage (Vb), the device is in the off state, with the current between the collector and emitter equal to zero. As the gate voltage increases and surpasses Vb, the IGBT enters the on state, allowing current to flow from the collector to the emitter. The IGBT in the on state acts as forward biased diode which allows the current to flow from collector to emitter. When the voltage from collector to emitter is positive, the diode allows the current to flow from collector to emitter. When the voltage from collector to emitter is negative, the diode is reverse biased and the current flows out from emitter to collector.The IXKP13N60C5M device has a better efficiency than traditional technologies due to its fast switching operations. When it is turned on, the stored charge on the gate capacitance is pulled off quickly and the device\'s gate-emitter junction is turned on. When it is turned off, the gate-emitter junction is reverses biased quickly and the gate capacitance is charged. As a result, the device can switch power more efficiently, minimizing losses due to switching.In summary, IXKP13N60C5M is an IGBT device used in power systems. It is used in various applications ranging from consumer electronics to renewable energy sources, mainly due to its fast switching operations which allow it to save energy. Its working principle involves the use of an insulated-gate bipolar transistor and a parasitic diode which allows the current to flow from or to the device depending on the voltage applied.
The specific data is subject to PDF, and the above content is for reference
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