Allicdata Part #: | IXKP20N60C5M-ND |
Manufacturer Part#: |
IXKP20N60C5M |
Price: | $ 2.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 7.6A TO220FP |
More Detail: | N-Channel 600V 7.6A (Tc) Through Hole TO-220ABFP |
DataSheet: | IXKP20N60C5M Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.59195 |
Vgs(th) (Max) @ Id: | 3.5V @ 1.1mA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220ABFP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 1520pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXKP20N60C5M is a vertical field effect transistor (FET) in a N-channel Metal-Oxide-Semiconductor (MOS) configuration intended for use in a variety of power applications. The IXKP20N60C5M combines the low power losses of a vertical structure with excellent current carrying capability, high efficiency, and fast switching speed. It is available in a variety of packages, including TO-220, TO-257 and PowerPAKs.
The IXKP20N60C5M belongs to a class of FETs called Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). It is a single MOSFET made up of a source, a drain, and a gate. The source is from which most of the current flows through the device, while the drain is the terminal from which current exits the device. The gate is the terminal to which a voltage is applied to cause the current flow through the device.
Since it is a vertical FET, the IXKP20N60C5M has a number of advantages. The vertical shape of the device allows for a larger cross-sectional area, which in turn translates to a higher current carrying capacity. This also allows for a lower resistance, which increases efficiency and power losses. The large cross-sectional area also allows for better heat dissipation, which enables the IXKP20N60C5M to operate at higher power levels without the risk of damage.
The IXKP20N60C5M is suitable for a wide range of power applications, including DC-DC converters, motor controls and solid state relays. It is particularly useful for high power applications, as the device can handle voltages up to 600V and peak currents up to 38A. It is also used in more demanding applications such as on-board chargers, switching power supplies and UPS systems.
The IXKP20N60C5M works by controlling the current flow between the source and the drain. When a voltage is applied to the gate, the MOSFET becomes “on” and current can pass through. When no voltage is applied, the device is “off” and no current can pass. The working principle of the IXKP20N60C5M is based on the “Metal-Oxide Semiconductor Capacitance”. This principle is based on the fact that when a voltage is applied to the gate, an electric field is created which attracts electrons from the source to the gate. The attraction of the electrons creates a thin layer of negative charge on the gate (known as “channeling”), which acts as a conducting path for the current.
The IXKP20N60C5M is a versatile and reliable MOSFET capable of handling a wide range of power applications. Its vertical device design enables high current carrying capacity and fast switching speeds, making it a suitable choice for many high power applications. Its low power losses, excellent current carrying capability, high efficiency, and fast switching speed ensure that it will continue to be a preferred choice for many power applications for years to come.
The specific data is subject to PDF, and the above content is for reference
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