| Allicdata Part #: | IXKP13N60C5-ND |
| Manufacturer Part#: |
IXKP13N60C5 |
| Price: | $ 2.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 600V 13A TO220AB |
| More Detail: | N-Channel 600V 13A (Tc) Through Hole TO-220AB |
| DataSheet: |  IXKP13N60C5 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 2.10281 |
| Vgs(th) (Max) @ Id: | 3.5V @ 440µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | -- |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 100V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 300 mOhm @ 6.6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXKP13N60C5 is a power MOSFET developed by Infineon Technologies. It is a vertical double-diffused power MOSFET (V-DMOS) with a double-sided cooled floating source technology and fast intrinsic body diode. As a switching element, it offers many features that make it suitable for use in a wide range of applications. This article will provide an overview of this MOSFET, including its application field and working principle.
Application Field
The IXKP13N60C5 is specially designed for AC-DC converters and high-frequency DC-DC converters. It is suitable for applications in motor control, welding and power supplies, and can provide high speed, low distortion switching and excellent dynamic performance for these applications. Additionally, it is suitable for resonant converters, voltage rectifier and phase shifting circuits, and can be used in energy conversion, high-density power distribution and other applications.
Working Principle
The working principle of the IXKP13N60C5 is based on the MOSFET structure, which is composed of an insulation layer, a gate and a drain. The MOSFET acts as an electronic switch between the source and the drain of the device. In this MOSFET, the drain and source are isolated by a vertical double-diffused structure, and the first-level floating source technology eliminates the need for a gate voltage. The MOSFET is driven by a low-impedance gate-level signal that provides high switching speed and excellent dynamic performance.
The IXKP13N60C5 features a built-in body diode that allows for a fast response time even when subjected to high frequencies. Additionally, this MOSFET has a low gate charge to enable more efficient operation. The vertical double-diffused structure of the MOSFET also provides improved thermal characteristics and high break down voltage.
Conclusion
The IXKP13N60C5 is a vertical double-diffused power MOSFET developed by Infineon Technologies. It offers a range of features that make it suitable for AC-DC converters, high-frequency DC-DC converters, motor control, welding and power supplies, resonant converters and voltage rectifier applications. Its operation is based on the MOSFET structure and it is driven by a low-impedance gate-level signal that provides high switching speed and excellent dynamic performance. Its built-in body diode and low gate charge characteristics also provide additional advantages for use in many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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