Allicdata Part #: | IXKP10N60C5M-ND |
Manufacturer Part#: |
IXKP10N60C5M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 5.4A TO220ABFP |
More Detail: | N-Channel 600V 5.4A (Tc) Through Hole TO-220ABFP |
DataSheet: | IXKP10N60C5M Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 340µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220ABFP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 385 mOhm @ 5.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IXKP10N60C5M is a Power MOSFET developed by Infineon Technologies Corporation for changing electricity supply through power conversion. It is a member of the company\'s CoolMOS CP7 family, specifically the 600V N-Channel MOSFET. The device is suitable for efficient, energy-saving systems with improved heat generation and heat transfer performance. It has a variety of application fields, and understanding its working principles is essential to using it correctly.
IXKP10N60C5M Application Field
The IXKP10N60C5M can be used for a variety of applications, including synchronous rectification, resonant converters, LLC converters, PFCs, OR-ing, ripple-filtering, and others. It is best suited for high-voltage and high-current applications, such as frequency converters, motor drives, DC/DC converters, and server power supplies.
The device offers several advantages to its users. These include a low input capacitance, an optimized Vth temperature coefficient that reduces tail current and improves efficiency, as well as a low on-state resistance that improves switching speeds and reduces switching losses.
IXKP10N60C5M Working Principle
The workings of the IXKP10N60C5M involve the usual voltage-controlled and resistive-controlled drain current source. In voltage control, voltage is applied to the gate to control the drain current. This is done by applying the gate-drain voltage to the gate of the device, which causes the device to turn on and off in response to the voltage level. In resistive control, the drain current is controlled by changing the resistance between the gate and source connections.
When the device is in the on-state, electrons from the drain are accelerated through the low-resistance channel towards the source, which results in an electric field and a drift velocity. This electric field is generated by the voltage change between the source and drain, and the field strength is determined by the voltage between the gate and drain. The drift velocity is caused by the electrical force applied by the gate voltage, which increases the kinetic energy of the electrons.
When the device is in the off-state, the gate-source voltage is returned to its zero-current level. As a result, the electric field that drives the electrons to the source is reduced, causing the current to remain low. The transition from the off-state to the on-state is activated when a gate voltage is applied to the device, raising the field strength and pushing the electrons through the channel.
Conclusion
The IXKP10N60C5M is a high-performance Power MOSFET with a variety of application fields. It is suitable for high-voltage and high-current applications, and has improved heat generation and heat transfer performance. The working principles of the device involve both voltage and resistive control, with the gate voltage controlling the drain current. Understanding these workings is essential to using the device correctly, and with the right system, the IXKP10N60C5M can help to provide efficient and energy-saving power conversion.
The specific data is subject to PDF, and the above content is for reference
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