IXKP35N60C5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXKP35N60C5 is a type of transistor known as an insulated gate bipolar transistor (IGBT). IGBTs are commonly used in applications that require switching of relatively large currents and voltages. This makes them particularly useful in power applications such as motor control, power conversion, and power switching and regulation. The IXKP35N60C5 is a specific type of IGBT known as a N-Channel enhancement mode MOSFET (eMOSFET).

An IGBT is basically a combination of a MOSFET and a bipolar junction transistor (BJT). Like MOSFETs, IGBTs have a conducting channel between their source and drain terminals controlled by the gate. However, unlike MOSFETs, IGBTs also have an additional control terminal to directly control their on/off state. This allows them to work more efficiently than MOSFETs when switching large loads, as well as allowing them to be switched on and off more quickly. The IXKP35N60C5 is an N-channel eMOSFET, meaning it has an N-type conduction channel between its source and drain terminals that is controlled by the gate.

The IXKP35N60C5 is a 6A IGBT with a maximum drain-source voltage of 600V. It has a forward voltage drop of 4.8V at a current of 6A, and an on-state saturation voltage of 2.6V. It has a maximum switching speed of 8kHz and a maximum junction temperature of 175°C. It is specifically designed for use in applications such as motor control, power conversion, and power switching and regulation.

The working principle of the IXKP35N60C5 (and all IGBTs) is based on the principle of majority carrier injection. When the gate is positive or high, electrons are injected into the P-type base region, which increases the conductivity of the N-type collector-drain region and causes the drain-source junction to become forward biased. This allows current to flow from source to drain and the IGBT to enter an on-state. When the gate is negative or low, it repels the electrons in the base and blocks the flow of current, causing the IGBT to enter an off-state.

In summary, the IXKP35N60C5 is an N-channel eMOSFET IGBT specifically designed for use in applications such as motor control, power conversion, and power switching and regulation. It is a 6A IGBT with a maximum drain-source voltage of 600V and a maximum junction temperature of 175°C. The working principle of the IXKP35N60C5 is based on the principle of majority carrier injection, allowing it to enter an on-state when the gate is high and an off-state when the gate is low.

The specific data is subject to PDF, and the above content is for reference