IXKP20N60C5

Vgs(th) (Max) @ Id:	3.5V @ 1.1mA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	1520pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	200 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	20A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXKP20N60C5 is a type of field-effect transistor (FET) that is designed for applications needing reliable, medium voltage and power handling capabilities. The IXKP20N60C5 is a form of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that was developed by International Rectifier. It is a single transistor component and is a unique, reliable and useful tool in many applications such as amplifiers, motor control and power supplies. A FET is a three-terminal, solid-state device that is used to control the flow of electricity. It is similar to a vacuum tube, and it operates by applying an electric field across a junction between an input and an output in order to control the flow of current. A FET is an excellent switch because it has high ON to OFF ratios and low turn on/off times.MOSFETs are the metal-oxide-semiconductor FETs that are used the most commonly. They work by using a gate terminal to control drain-source current flow. When a gate voltage is applied, a charge-carrier depletion region is created which controls the current flow between the source and the drain. MOSFETs have lower gate capacitance, allowing them to respond faster, and they have higher ON resistance, enabling the current flow to be greater.The IXKP20N60C5 is a single-junction, MOSFET transistor designed for medium voltage applications such as motor control, amplifiers and power supplies. It has a high current capacity due to its low RDS(on) resistance and its maximum current capacity is 20A. Its maximum drain-source breakdown voltage is also rated at a high 600V. It also has a low gate threshold voltage of 2.2V. This means that a lower gate voltage can be used to switch the device on or off. The working principle of the IXKP20N60C5 is the same as the general working principle for MOSFETs. When the gate voltage is applied, a charge-carrier depletion layer is created between the drain and the source. When the charge-carrier depletion layer is established, current can be controlled, allowing current to flow from the source to the drain. When the gate voltage is removed, the charge-carrier depletion layer disappears and no current can flow.The IXKP20N60C5 is a highly reliable, medium voltage MOSFET transistor. This unique transistor is used in many applications such as amplifiers, motor control and power supplies due to its low turn on/off times and its high current capacity. It is a very useful tool in designing reliable, medium voltage systems.

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