IXKP24N60C5M

Vgs(th) (Max) @ Id:	3.5V @ 790µA
Package / Case:	TO-220-3 Full Pack, Isolated Tab
Supplier Device Package:	TO-220ABFP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	--
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	2000pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	52nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	165 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.5A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The IXKP24N60C5M is a MOSFET transistor in the Single category, typically used in a wide range of applications. This type of transistor is designed to provide an efficient control of current flow through the device. In its simplest form, it is composed of a source and a drain, separated by an oxide layer.In terms of applications, the IXKP24N60C5M transistor is used in a wide range of applications including power control circuits, amplifiers, motor control circuits, switch mode power supplies, and various other electronic systems. In these devices, it is used to efficiently switch a relatively large amount of current.The working principle of the IXKP24N60C5M MOSFET transistor is based on the control of the current flow through the device through the application of a small voltage to the gate of the device. This gate voltage, when applied in the proper manner can control the resistance between the source and the drain of the transistor, effectively controlling the current flowing through the device and limiting the total amount of current that can be sent through the transistor. The current-voltage characteristic of the IXKP24N60C5M MOSFET can be adjusted as well, allowing it to be used in a variety of applications and providing flexibility in terms of performance.When using the IXKP24N60C5M transistor in a circuit, it is important to ensure that the gate voltage is properly applied. If the gate voltage is too large or too small, it can cause the transistor to malfunction or even enter into a destructive state. It is also important to ensure that the load applied to the transistor is within the rated range of the device.In addition to its use as a field-effect transistor, the IXKP24N60C5M can be used in analog applications as well. It is well suited for use in high-frequency, high-amplitude, low-noise, and frequency-sensitive applications. The IXKP24N60C5M provides a high operating voltage and current levels, making it suitable for power and signal amplifiers. It is also used in a variety of linear and switching applications including power switching, signal switching, and pulse control, as well as various DC-to-DC conversion applications.The IXKP24N60C5M is a versatile device and its use is commonplace in many different types of applications. Its high performance and low cost make it an attractive choice for manufacturers looking to add an efficient and reliable switching element to their circuits. In addition, its simple construction, along with its ability to effectively switch relatively large amounts of current, makes it one of the most popular choices for power control and amplifier applications.

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