IXSH10N60B2D1

The IXSH10N60B2D1 is an exceptionally powerful device and represents the fourth generation of Insulated Gate Bipolar Transistors (IGBT). This 600V IGBT is particularly suited for applications that need high efficiency and compliance with current standards. The IXSH10N60B2D1 is the combination of both IGBT and fast recovery diode, that makes it different from other IGBTs.

Applications

 The IXSH10N60B2D1 can be used in a wide range of applications, such as motor drives, welding, air conditioning, solar inverters, uninterruptible power supplies, traction, and in total energy systems. It is used in Uninterruptible Power Supplies (UPS) systems and is applicable for medical equipment.

The IXSH10N60B2D1 is a popular choice for power inverter in grid-tied systems and is widely used in stationary power applications. It is often used in power electronic transformer systems such as Traction Inverter, Motor Drive, UPS, High voltage direct current (HVDC), and renewable energy systems such as solar and wind power inverter. The application is found in variable speed drive, electric vehicle, and consumer electronics such as electric arc welders.

Features and benefits

The IXSH10N60B2D1 has been designed as a highly reliable device for its application in high power switching applications. It features low total gate charge, low on-state conductance, Fast switching speed and a low integration capacitance over the entire specified temperature range.

It has a good thermal conductivity which ensures improved switching performance and reliability. The IXSH10N60B2D1 has considerably low losses even at high currents. This benefit helps its application in switching of high current and power switching applications.

In addition, its low reverse recovery current and fast recovery time make it suitable for applications. The IXSH10N60B2D1 is a very cost-efficient solution which keeps unwanted losses at a minimum.

Working principle

The IXSH10N60B2D1 uses a special switching mode called Pulse Width Modulation (PWM). PWM is a process of quickly switching the IGBT on and off at a certain frequency and duty cycle. This enables the IGBT to work efficiently and provide a better current control.

The rapid switching of the IGBT is accompanied by an inrush of current which can cause an electromagnetic interference. In order to counter this effect, the IXSH10N60B2D1 can be provided with PFC, EMI or ESD protection circuits. This helps to protect the transistor from any external interference, particularly from electric fields.

The IXSH10N60B2D1 is also capable of handling high voltages due to its high breakdown voltage. This increases the circuit efficiency and helps reduce the power lost in the form of heat. In addition, the IXSH10N60B2D1 can be used to produce high output currents as it has low on-state resistance.

Conclusion

The IXSH10N60B2D1 is a high-grade IGBT based power switching transistor which is highly suitable for various applications such as motor drives, welding, air conditioning, solar inverters, uninterruptible power supplies, traction, and in total energy systems. It has exceptional power handling characteristics with low losses and excellent thermal performance. The IXSH10N60B2D1 is a cost-effective solution that ensures reliable current control and high efficiency for its application.