IXSH30N60CD1

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IGBT transistors, insulated gate bipolar transistors, share some attributes of both bipolar and field-effect transistors. Therefore, depending on the design, an IGBT-based transistor can be seen as an insulated-gate FET (IGFET) with a bipolar collector-base junction. However, there are several important features that distinguishes IGBT from an IGFET. The IXSH30N60CD1 is a single IGBT transistor, which is suitable for a wide range of applications.

IXSH30N60CD1 Application Fields

The IXSH30N60CD1 is a N-channel IGBT enhanced with an embedded fast recovery anti-parallel diode. This is a 3-pin IGBT which has a rated blocking voltage (Vces) of 600V and a maximum current rating of 30A. This IGBT is suitable for automotive, appliance and industrial motor drive applications, as it can be used as a full-bridge switch. Built-in features such as compactness and fast switching time make it suitable for AC and DC motor drive applications, as well as high-capacity rectification and inverters used for softer starters and AC motor control.

Apart from motor drive applications, this IGBT is also applicable for power factor correction systems, high frequency DC-DC converters for laptop computers, telecommunications systems, and UPS systems. In addition, the IXSH30N60CD1 is designed with low on-state resistance (Rds(on)), fast switching speeds and short tail current, which further make it suitable for power converters, power supplies and other power switching applications.

IXSH30N60CD1 Working Principle

The working principle of an IGBT is similar to that of an MOSFET, but the two semiconductors differ in their construction and their operating characteristics. An IGBT typically consists of two independent N-type MOSFETs connected in series, with their source terminals connected together. The gate terminals of each MOSFET are connected to the emitter terminal of the other; the collector terminal of one MOSFET is connected to the collector terminal of the other, and both these terminals are connected to the load. The gate-emitter voltage (Vge) of an IGBT controls the devices conductivity. A positive Vge opens a conductive channel between the collector and the emitter, and current flows from the collector to the emitter. A negative Vge closes the conductive channel and current stops flowing.

The IXSH30N60CD1 offers some advantages compared to the conventional power transistors, leading to increased reliability, efficiency and lower power losses. This IGBT has the capability of providing higher gain and breakdown voltage than a MOSFET. In addition, the IGBT has lower on-state and switching losses, faster switching speeds and higher efficiency than a power BJT. Its fast recovery diode helps to improve the thermal cycling characteristics, as well as reduce current surges during switching operations.

Applications

The IXSH30N60CD1 IGBT is a versatile device that can be used in many different types of applications, including motor control, power distribution, lighting control, uninterruptible power supplies and solar energy systems. Its fast switching speed, low on-state resistance and built-in fast recovery diode make it suitable for many applications that require high current and voltage switching. As such, the IXSH30N60CD1 IGBT is an ideal choice for many industrial and consumer applications.

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