IXSH45N100

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The IXSH45N100 is a single high voltage IGBT developed specifically for use in various applications. It is designed as a rugged and reliable device which can be used in many power applications, such as solar inverters, motor drives and power electronic applications.

The IXSH45N100 is an upgrade of the IXSH45N100 IGBT, boasting of a higher current rating of 600 amp compared to the 250 amp of the previous version. It features voltage ratings ranging from 600V to 1800V with high current capability and a higher efficiency against other IGBTs. It also features wide junction temperature range of up to 175°C, lower power losses and zero reverse recovery release time.

The IXSH45N100 can be employed in a variety of uses including power control, low voltage applications and smart power control. The device features a wide range of applications, such as motor control, home appliances and UPS systems. Additionally, extremely low power loss and fast switching times make this device ideal for use in high-frequency operation.

In terms of working principle, the IXSH45N100 utilizes the IGBT principle to create a single transistor-like device which can be used to switch electricity in high-voltage applications without fail. Essentially, it uses a N-channel MOSFET as the main element which works with a normally closed gate. When high voltage is applied to the gate, the transistor opens up, allowing electricity to flow through it until the gate voltage is removed.

The IXSH45N100 offers fast switching capabilities and high efficiency gains, compared to other high voltage IGBTs. This device is also very reliable due to its wide tolerance ranges and its ability to handle high mechanical shock and vibrations. Furthermore, it can be used in a range of power control applications, due to its excellent functionality.

Due to its wide range of characteristics, the IXSH45N100 is a very versatile device which can be used in a variety of applications, ranging from motor control to low voltage applications. Its ruggedness and reliability makes it suitable for applications which require high-voltage IGBTs with improved efficiency and power losses.

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