IXSH35N120B

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The IXSH35N120B is a two-in-one integrated device of insulated gate bipolar transistor (IGBT) and diode. This N-channel IGBT has a voltage rating of 1200 V and is capable of delivering continuous drain current of up to 35 A.

IGBT is a type of transistor used to control electric current with lower switching losses compared to the traditional bipolar transistors. As a power semiconductor device, it is mainly employed in the applications where high voltages and currents are available. It possesses both the fast switching speed of a metal-oxide semiconductor field-effect transistor (MOSFET) and the low-saturation-voltage capability of a bipolar transistor. Other application areas include motor control, DC-DC power conversion, and solenoid control.

The working principle behind the IXSH35N120B power device is composed of two main processes. First is the current-precharging process which creates an internal electric field and the gate-source voltage is then increased to the threshold voltage for electrons to flow and form a conducting bridge. Upon the arrival of this electric field, electrons will start to flow from the source to the drain, which is accompanied by stored charges in the gate region. This stored charge results in a large current from the positive voltage source connected to the gate, while the second is the switching process.

By imposing chosen gate-source and gate-drain voltages levels, the drain current is switched between its maximum current level and zero; it is important to note that the gate drive voltage must always exceed the minimum gate-source voltage (Vgsth) for IGBT operation. This process results in fast switching of the drain current in accordance with the gate-source pulse waveforms. In addition, the IXSH35N120B IGBT module also has a low input capacitance, which makes it suitable for use in high-frequency switching applications.

As a reliable and cost-effective device, the IXSH35N120B IGBT module is used in broad range of switching applications. Some of these applications include light inverters, low-loss switching applications, inverters for industrial motor drives, as well as electronic power supplies and DC/DC converters. Its compact package makes it suitable for use in any big-scale installation.

In conclusion, the IXSH35N120B IGBT module exhibits fast switching speed and excellent tolerances. It is an effective and reliable device for controlling high voltage and current in applications ranging from motor control to DC/DC converter. Its low input capacitance and outstanding performance with the fast switching process makes it a very useful device in various types of power semiconductor device applications.

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