IXSH45N120

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The IXSH45N120 is an IGBT, also known as an Insulated Gate Bipolar Transistor, which lies under the classification of Transistors - IGBTs - Single. It is a power semiconductor device which has been designed for high-current, high-voltage applications.

An IGBT is essentially a cross between a MOSFET and a BJT-- it has the fast switching characteristics of a MOSFET and the voltage-handling capability of a BJT. The IXSH45N120 combines a MOSFET control gate and a BJT drain, stringed together in a composite structure forming a power transistor with large current and voltage capabilities.

The IXSH45N120 is rated at 1200V, with a 55A continuous current carrying capacity and a maximum pulsed current rating of 220A. Its main applications are located in high current, medium to high voltage motor control, automotive, and power conditioning. These applications might include inverters or choppers for control of low- or medium-power DC and AC motors, appliance control, automotive electrical systems, and industrial power control.

To understand the device\'s working principle requires an understanding of how it is composed. The IXSH45N120 is a two-terminal, four-layer device composed of a metal oxide semiconductor (MOS) cell coupled with a bipolar junction transistor (BJT). The MOSFET gate controls the BJT collector current, allowing the IGBT to act much like a switch. This switch is then used to turn on or off any motor or load, controlling or switching its power.

The operation of the IXSH45N120 is based on manipulating the current passing through the channel of the MOS cell. This channel remains off when the potential of the gate is at a low level, blocking any further current from passing through. When the gate’s voltage is increased, the potential at the drain of the MOS cell exceeds the threshold voltage, allowing current to flow through. In other words, it acts as an electronic switch, with an on/off functionality.

When the IGBT is in the “on” state, the BJT is also triggered into action. This increases the current conduction at the drain of the MOS cell and increases the collector current at the amplifier output of the N-channel MOSFET. In turn, the current delivered to an external circuit increases, resulting in an amplified voltage.

The IXSH45N120 can also operate in reverse bias, an important feature which allows it to be utilized in a variety of applications. In this mode, the junction between the gate and drain of the MOSFET is made to become negative. This cuts off the current flow from the MOSFET, which in turn prevents the BJT from conducting current.

Finally, the IXSH45N120 also has built-in protection features, such as over-voltage breakdown, avalanche breakdown, and over-current protection, which allow it to operate in a range of applications with varying power demands. These features help to ensure its long-term, reliable operation.

In conclusion, the IXSH45N120 is a versatile IGBT device from the Transistors - IGBTs - Single category which can be used in several applications requiring high-current, high-voltage. Its MOSFET control gate and BJT drain coupled in a composite structure make it a power transistor that carries large current and voltage capabilities. Additionally, its reverse bias mode and in-built protection features provide convenience across a range of applications.

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