IXSH24N60AU1

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The IXSH24N60AU1 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) that is developed and produced by Infineon Technologies. It is a N-channel MOSFET which utilizes pioneering trench gate IGBT technology and is specifically designed to be used in industries where high speed switching and reliable operation are of utmost importance.

The IXSH24N60AU1 is an important part of today’s industrial automation systems. Its characteristics make it extremely suitable for motor control, programmable logic control, servo systems, and industrial wide power conversion, where high speed frequency, high efficiency, and a high degree of reliability are all needed in order for the system to operate at maximum performance level.

The IXSH24N60AU1 has a breakdown voltage of 600V, Collector-Emitter saturation voltage of 4.5V and a unique trench construction that ensures fast switching time. The MOSFET structure has a maximum temperature of 175C and a high dV/dt of 5,000V/µs, making it an ideal choice for high speed applications.

The working principle behind the IXSH24N60AU1 utilises a combination of one positive and one negative charge carrier (holes and electrons, respectively) that are enabled to flow through the device through switching action. This is done by allowing the MOSFET gate to be opened and closed in order to enable or disable the conduction of a current. The IXSH24N60AU1 has two distinct states, ON and OFF, and when one is chosen, the opposite can’t be selected until the state is reversed. This unique and efficient feature allows fast switching rates and exceptional power densities over traditional IGBTs.

The primary application field of the IXSH24N60AU1 is motor control, where it can be used to provide high efficiency and power with fast switching times. It is also suitable for applications where high voltage and high amperage currents are needed such as DC-DC converters, power supplies, and power conversion systems. It’s also highly efficient for motor drives and UPSs.

The IXSH24N60AU1 is a state-of-the-art IGBT that is perfect for high speed switching, motor control, and power conversion applications. Its uniquely designed trench structure enables high dV/dt, temperature capabilities, and fast switching times, allowing it to provide the user with excellent performance and efficiency. With its wide range of applications and features, the IXSH24N60AU1 is an ideal choice for industrial automation and many other power systems.

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