IXSH30N60B2D1 Allicdata Electronics
Allicdata Part #:

IXSH30N60B2D1-ND

Manufacturer Part#:

IXSH30N60B2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 48A 250W TO247
More Detail: IGBT PT 600V 48A 250W Through Hole TO-247AD (IXSH)
DataSheet: IXSH30N60B2D1 datasheetIXSH30N60B2D1 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Switching Energy: 550µJ (off)
Base Part Number: IXS*30N60
Supplier Device Package: TO-247AD (IXSH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 30ns
Test Condition: 400V, 24A, 5 Ohm, 15V
Td (on/off) @ 25°C: 30ns/130ns
Gate Charge: 50nC
Input Type: Standard
Series: --
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Current - Collector Pulsed (Icm): 90A
Current - Collector (Ic) (Max): 48A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IXSH30N60B2D1 is a single-stage insulated gate bipolar transistor (IGBT) manufactured by IXYS Corporation. This particular IGBT is commonly utilized in motor control applications and renewable energy systems. Although this device is becoming increasingly popular, its application field and operating principle can still remain somewhat of a mystery for those not actively involved in the power electronics industry. This article will thus attempt to shed some light on the IXSH30N60B2D1 application field and working principle.

The IXSH30N60B2D1 is a high speed IGBT that is capable of operating at a frequency range of up to 25 kHz. Its collector current rating is a whopping 75A, while its collector-emitter Voltage rating is a whopping 600V. This makes it ideal for power electronics applications, such as motor control and renewable energy systems. The device is also capable of operating in both modes: voltage and current. This makes it highly suitable for use in back-to-back and forward converter circuit topologies.

Now that we know what applications the IXSH30N60B2D1 is suited for, let\'s examine the device\'s internal working principle. The IXSH30N60B2D1 is an insulated gate bipolar transistor (IGBT). In the simplest terms, an IGBT is a three-terminal power semiconductor device that combines the properties of a MOSFET (metal-oxide-semiconductor field-effect transistor) with the insulation and speed of a bipolar transistor. An IGBT uses a MOS control that is integrated to the junction between the collector and emitter regions. This allows the device to switch rapidly and provides excellent current gain.

When the device is in its off-state, the collector-emitter junction is inversely-biased, making the device inactive. When the device is in its on-state, the MOS gate is charged and a potential difference is created between the gate and emitter terminals. This enables current to flow between the collector and emitter regions and activates the transistors. As the current flow increases, the amplifier gain of the device increases, allowing the device to operate with higher loads.

Overall, the IXSH30N60B2D1 is an ideal IGBT for power electronics applications, such as motor control and renewable energy systems. Its high collector current and voltage ratings make it highly suitable for use in back-to-back and forward converter circuit topologies. In addition, its IGBT technology ensures excellent current gain and superior speed.

The specific data is subject to PDF, and the above content is for reference

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