IXSH35N140A Allicdata Electronics
Allicdata Part #:

IXSH35N140A-ND

Manufacturer Part#:

IXSH35N140A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1400V 70A 300W TO247
More Detail: IGBT PT 1400V 70A 300W Through Hole TO-247AD (IXSH...
DataSheet: IXSH35N140A datasheetIXSH35N140A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 300W
Supplier Device Package: TO-247AD (IXSH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 35A, 3 Ohm, 15V
Td (on/off) @ 25°C: 40ns/150ns
Gate Charge: 120nC
Input Type: Standard
Switching Energy: 4mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Current - Collector Pulsed (Icm): 140A
Current - Collector (Ic) (Max): 70A
Voltage - Collector Emitter Breakdown (Max): 1400V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXSH35N140A is a SiC-based IGBT (Insulated Gate Bipolar Transistor) that can handle high voltages and currents. It is suitable for applications such as motor controls, high-power switching, and inverter applications. This article will cover the application field and working principle of IGBTs with the IXSH35N140A as the focus.

Application fields

The IXSH35N140A IGBT is a high-power device that is well-suited for motor control and power switching applications. It features reverse recovery current reduction technology that enables it to reduce losses associated with switching operation, allowing it to achieve higher speeds and efficiencies. In addition, its low gate threshold voltage allows it to be used with low voltage control devices such as microcontrollers.

Inverters are another application field where the IXSH35N140A IGBT excels. It is well-suited for applications that require high voltage and current levels, such as those found in UPS systems, solar inverters, and electric and hybrid vehicle applications. Its low switching loss, fast switching, and high breakdown voltage and current make it an ideal choice for these applications.

The IXSH35N140A IGBT is also widely used in consumer and industrial applications, such as light dimmers, frequency converters, welding machines, and converters. Its ability to handle high currents and temperatures make it a suitable choice for these applications that require power switching.

Working Principle

An IGBT is a type of power switch that combines the high-current carrying capability of a bipolar transistor and the low-on resistance and fast switching capability of a metal-oxide-semiconductor field-effect transistor (MOSFET). The IXSH35N140A IGBT consists of two layers of semiconductor material, typically silicon, separated by an insulating layer of silicon dioxide. When a voltage is applied to one of the silicon layers, electron holes are created in the silicon oxide layer that allow current to flow between the two layers, creating the IGBT. The IGBT is an ideal switch because it can be switched on and off by applying a voltage to the gate terminal, which controls the current flow between the two layers, and is capable of carrying a high current.

The IXSH35N140A IGBT is a SiC-based device, meaning it is made of silicon carbide instead of silicon. Silicon carbide (SiC) is a material that is more efficient at conducting electricity and heat than silicon, allowing for higher current and temperature ratings. The IXSH35N140A IGBT is rated for up to 1750A continuous current and up to 10,000A surge current.

In addition to its high current ratings, the IXSH35N140A IGBT also features a low gate threshold voltage, allowing it to be used with low voltage control devices such as microcontrollers. It also has a fast switching time of only 8.5µs for a 10A to 50A load, allowing for higher power efficiency, improved system performance, and reduced power losses.

Conclusion

The IXSH35N140A IGBT is a high-power device that is well-suited for motor control and power switching applications. It features reverse recovery current reduction technology that allows it to reduce losses associated with switching operation, allowing it to achieve higher speeds and efficiencies. It is also suitable for applications such as inverters, light dimmers, and frequency converters. Its low gate threshold voltage, fast switching time, and high current and temperature ratings make it an ideal choice for these applications.

The specific data is subject to PDF, and the above content is for reference

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