IXSH15N120BD1 Allicdata Electronics
Allicdata Part #:

IXSH15N120BD1-ND

Manufacturer Part#:

IXSH15N120BD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 30A 150W TO247
More Detail: IGBT PT 1200V 30A 150W Through Hole TO-247AD (IXSH...
DataSheet: IXSH15N120BD1 datasheetIXSH15N120BD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 1.5mJ (off)
Base Part Number: IXS*15N120
Supplier Device Package: TO-247AD (IXSH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 30ns
Test Condition: 960V, 15A, 10 Ohm, 15V
Td (on/off) @ 25°C: 30ns/148ns
Gate Charge: 57nC
Input Type: Standard
Series: --
Power - Max: 150W
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Introduction

The IXSH 15N120 BD1 is a technology grade, single IGBT module designed specifically for powerapplications. It combines high voltage, high power, and high efficiency into one compact package.This IGBT is designed to offer superior system performance and reliability in a wide variety of markets,including motor drives, UPS, solar inverter, home appliance, automotive, and aerospace.

Application Field and Working Principle

The IXSH 15N120 BD1 is an enhanced performance power semiconductor that is ideal formotor drive and high voltage, high power applications. It utilizes an N-channel IGBT, which offerssuperior power performance, robustness, and reliability. This IGBT is also capable of withstandingvoltage levels up to 1200V, allowing it to function in high power, high voltage systems.

Additionally, the IXSH 15N120 BD1 is designed to have superior thermal performance, allowing itto operate at higher temperatures for a longer period of time. This is especially beneficial forapplications where higher power needs to be dissipated quickly.

The working principle of the IXSH 15N120 BD1 is based on a principle called the electron-holerecombination, which is an inherent feature of all silicon semiconductors. When a voltage is appliedto the IGBT, an electrical field is created in the potential barrier, which causes electrons toaccumulate in the thin layer of p- type material at the interface with the n- type material.

The accumulated electrons and holes quickly combine, releasing a large amount of energy, leading tothe formation of a high current electron-hole flow. This electron-hole flow is responsible for thetransfer of power to the external circuit.

Advantages of IXSH 15N120 BD1 IGBT

The IXSH 15N120 BD1 IGBT offers several key advantages over traditional silicon-based powersemiconductors, including improved efficiency and power quality, increased reliability, betterthermal performance, and reduced system costs.

The IGBT’s superior power efficiency allows for higher performance in motor drives and otherapplications. It offers power quality that is comparable to that of a thyristor, while requiring lesspower to operate. Additionally, the IGBT’s robust design and high temperature capability reducessystem costs by eliminating the need for active cooling mechanisms or other expensive components.

Moreover, its increased reliability compared to other technologies increases system uptime andreduces maintenance costs. This IGBT also offers improved thermal performance by dissipating heatmore quickly and efficiently, allowing it to operate in a wider range of temperature extremes.

Conclusion

The IXSH 15N120 BD1 IGBT is an ideal choice for a wide range of applications, from motor drivesto solar inverters. It offers superior power performance, robustness, reliability, and thermalperformance compared to other technologies, and its increased efficiency and reduced system costsmake it an attractive option for many industries.

The specific data is subject to PDF, and the above content is for reference

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