IXSH25N120A Allicdata Electronics
Allicdata Part #:

IXSH25N120A-ND

Manufacturer Part#:

IXSH25N120A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 50A 200W TO247AD
More Detail: IGBT 1200V 50A 200W Through Hole TO-247AD (IXSH)
DataSheet: IXSH25N120A datasheetIXSH25N120A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 200W
Supplier Device Package: TO-247AD (IXSH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 25A, 18 Ohm, 15V
Td (on/off) @ 25°C: 100ns/450ns
Gate Charge: 120nC
Input Type: Standard
Switching Energy: 9.6mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Current - Collector Pulsed (Icm): 80A
Current - Collector (Ic) (Max): 50A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An Insulated Gate Bipolar Transistor, or IGBT, is a high-power semiconductor device designed in a single package to act as an efficient switch between power devices and the environment. The IXSH25N120A is an example of one such device. It is capable of controlling the power flow of up to 25 amps and is capable of blocking voltages of up to 1200 volts. With its high power capacity and switching speed, the IXSH25N120A is an excellent choice for a variety of applications.

Application Fields for the IXSH25N120A

The IXSH25N120A is used in a wide variety of industrial, commercial, and consumer products. It can be found in many motor control applications, where it is used to deliver varying degrees of power to various types of motors. It is also used as an efficient switch in electronic circuits, controlling multiple stages of a circuit or providing reliable control over power delivery to transistors. In addition, the IGBT is used extensively in home appliances, power tools, remote control devices, and audio/video equipment.

Working Principle of the IXSH25N120A

The IXSH25N120A is constructed with a metal oxide and a silicon substrate, which provide the electrical insulation needed to safely and effectively separate the power source and the load. Inside the IGBT\'s structure, a metal gate lies between two junctions and creates a controlled charge flow through the IGBT. The gate is controlled by a voltage source connected to the metal gate; when the voltage source is switched on, the current flow is allowed, and when the voltage is switched off, the current is blocked. This efficient control allows for precise control over larger currents.

The IGBT also works differently than a normal transistor, providing faster switching speeds and higher power efficiency. In a transistor, when the voltage is applied across the transistor base-emitter junction, current is allowed to pass through the transistor. In an IGBT, however, the voltage applied to the gate controls both the current and the charge allowed through. Thus, the IGBT is capable of more efficient switching, as it sets and maintains the current at the set point, which allows for faster switching speeds.

The IXSH25N120A is a very useful device for many applications due to its high power capacity and fast switching speed. It can be found in many motorcontrol applications, where it is used to deliver varying degrees of power to various types of motors. It is also used as an efficient switch in electronic circuits, controlling multiple stages of a circuit or providing reliable control over power delivery to transistors. In addition, the IXSH25N120A is used extensively in home appliances, power tools, remote control devices, and audio/video equipment.

The specific data is subject to PDF, and the above content is for reference

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