IXSH45N120B

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IXSH45N120B is a type of Insulated Gate Bipolar Transistor (IGBT) that belongs to the family of single transistors. It is considered a top-level device in the level of IGBT technology and is widely accepted by engineers and power suppliers. In this article, we will explain IXSH45N120B\'s application field, working principle and its operation states.

The basic application field for IXSH45N120B is power applications, i.e. any situation which requires power conversion from one form to another. It is mostly used in various switching circuits, such as inverters and converters, where its most important function is to convert and regulate power from the MOSFET side to the bipolar-side. Additionally, it can also be used for motor drives, battery charging systems, and other power supplies.

IXSH45N120B\'s operations are based on the principles of avalanching, and as a result, this transistor\'s conduction abilities depend on the avalanching process. This process occurs when current or voltage increases to a certain level, resulting in avalanche breakdown and creating great quantities of space charges. Due to this breakdown, current flow become much easier than in a normal semiconductor, enabling IXSH45N120B to work as a powerful switch even at high voltage and current levels.

The operation states for IXSH45N120B are mainly four: cut off, saturation, linear operation and avalanche breakdown. During the cut-off state, the voltage between gate and emitter is too low and, as a result, the current will not flow through the transistor; this will happen when the gate voltage is lower than the threshold voltage. However, when the gate voltage increases, it gives rise to a voltage drop between gate and emitter, and as such, current starts to flow through the transistor. This is the saturation state, in which the current is much greater due to the presence of the avalanche breakdown.

The linear state can be observed when the voltage between emitter and collector remains constant, and the current is directly proportional to the gate voltage. This operation state is used for inverters, AC phase control and other applications that require a proportional relationship between the voltage and the current. Finally, the avalanche breakdown occurs when the voltage between gate and emitter reaches a certain level, resulting in a large quantity of space charges, which in turn leads to easier conduction.

In conclusion, IXSH45N120B is a powerful IGBT transistor that is suitable for numerous power applications, such as inverters and converters. It has four operation states, which make it a very effective device when voltage and currents vary over time. Furthermore, it works using the principles of avalanching, making it a reliable and efficient transistor.

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