IXSH25N120AU1

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The IXSH25N120AU1 is a high-voltage insulated gate bipolar transistor (IGBT). IGBTs are three-terminal power semiconductor devices typically used for switching and amplifying electrical signals. IGBTs are the most commonly used type of bipolar power transistor because of their low switching losses, excellent thermal characteristics, high input impedance, and low saturation voltage.

In the IXSH25N120AU1, the insulated gate field-effect transistor (IGFET) is on either side of the bipolar transistor (BJT). The insulated gate is electrically isolated from the BJT, which allows the device to be switched on and off by a low power input signal. For example, when the IGBT is in a “switch-on” state, the voltage applied to the gate is used to drive the current through the Bipolar Junction Transistor (BJT) and the resistance across the device is low. Conversely, when the IGBT is in “switch-off” state, the voltage applied to the gate is reversed and the resistance is high.

The IXSH25N120AU1 is suitable for a wide range of industrial applications, such as DC-DC converters, motor phase-angle controllers, frequency and AC voltage converters, and digital circuits. It is specifically designed for high-speed switching applications and provides high efficiency, large input capacitance, low saturation voltage, and low gate drive power consumption.

The IXSH25N120AU1 also has an fast switching speed. At turn-on, the rise time is typically 130 nanoseconds and the Fall times is typically 32 nanoseconds. The switching speed is due to the device’s fast soft-recovery reverse conduction diode, which reduces commutation losses, increases circuit efficiency, and reduces power dissipation. In addition, the IXSH25N120AU1 has a low saturation voltage and a high gain, which enables it to quickly switch from “on” to “off” states.

The IXSH25N120AU1 is also tolerant to high temperatures. Its thermal resistance junction to case is typically 3.3°C/W, which is lower than most other IGBTs. This allows for better heat dissipation and improved operation in high-temperature conditions. Additionally, the IXSH25N120AU1 provides high surge energy, which allows it to handle high-frequency or high-power loads without deforming or incurring too much heat.

In addition, the IXSH25N120AU1 is designed to provide high current density. It has a current capability up to 32 Amps at collector emitter voltage ratings up to 1200 Volts. Its current rating is three times higher than that of low-voltage IGBTs. This allows the IXSH25N120AU1 to be used in high-power applications, such as industrial motor drives, UPS systems, and factory automation.

To sum up, the IXSH25N120AU1 is an insulated gate bipolar transistor (IGBT) designed for high-speed switching applications, providing high efficiency, high surge energy, high current density, low gate drive power consumption, and low saturation voltage. It is suitable for a wide range of industrial applications, such as motor phase-angle controllers, frequency and AC voltage converters, and digital circuits.

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