IXSH24N60

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The IXSH24N60 is a highly efficient IGBT with a single insulated gate semiconductor configuration. This device is used in a variety of applications, from high power switching to high frequency applications. It can be used for both AC and DC applications, and is suitable for use in circuits requiring low device on-state voltage.

The IXSH24N60 is constructed from monolithic double-side-diffused drifts with a vertical structure. It is capable of providing up to 1200 volts of collector-emitter voltage, and up to 24A of peak current. Its collector-emitter saturation voltage is rated at 1.3V, and it has a maximum on-state resistance of 0.08 ohms.

The IXSH24N60 features a dual-gate structure, which provides positive temperature coefficient drive characteristics. This feature helps to reduce the amount of current needed to drive the switch, as well as to improve overall performance. Additionally, the IXSH24N60 provides excellent AC performance and switching speed. The device can operate at frequencies up to 5MHz, and is rated for operation at temperatures up to 175°C.

The IXSH24N60 provides a number of application fields. One major use is as an ultra-high frequency switch, due to its fast switching speed, low on-state voltage, and low overall device resistance. This device is also widely used as an inverter and rectifier switch in DC-DC converters. Additionally, it is used within automotive systems and laser equipment as a switching device, and for other high power applications.

The operation of the IXSH24N60 is based on a simple principle. To turn the IGBT on, a positive gate-emitter voltage is applied, which changes the internal structure of the device, allowing current to flow between the collector and emitter. To turn the switch off, the gate-emitter voltage is brought back to zero. This causes the switch to become completely non-conductive and no current will flow between the collector and emitter.

The IXSH24N60 is ideal for a wide range of high power applications, due to its excellent performance, low on-state resistance, and fast switching speed. It is capable of providing operation up to 1200V, 24A peak current, and 175°C operation temperature. The dual-gate structure ensures positive temperature coefficient drive characteristics, which reduces the amount of current needed to drive the switch and improves overall performance. It is widely used in a variety of applications, including automotive systems, laser equipment, DC-DC converters, and other high power switching applications.

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