IXXH30N60B3D1 Allicdata Electronics
Allicdata Part #:

IXXH30N60B3D1-ND

Manufacturer Part#:

IXXH30N60B3D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 60A 270W TO247
More Detail: IGBT PT 600V 60A 270W Through Hole TO-247 (IXXH)
DataSheet: IXXH30N60B3D1 datasheetIXXH30N60B3D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 270W
Supplier Device Package: TO-247 (IXXH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 400V, 24A, 10 Ohm, 15V
Td (on/off) @ 25°C: 23ns/97ns
Gate Charge: 39nC
Input Type: Standard
Switching Energy: 550µJ (on), 500µJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Current - Collector Pulsed (Icm): 115A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXXH30N60B3D1 is an insulated gate bipolar transistor (IGBT) designed as single-switching operation, which can be consumed as a module in many various industrial applications. Despite its smaller size (30mm x 32mm), IXXH30N60B3D1 can carry up to a current of 600A and its breakdown voltage is 600V. It is designed to maintain high efficiency, compact size, and high-speed switching operations such as high frequency applications.

IXXH30N60B3D1’s application field is mainly industrial applications such as solar inverter systems, uninterruptible power supply (UPS), industrial robots, solar energy systems, DC-AC transformer, machine tools, and motors. As its high speed switching operation, it can be used as an alternative for MOSFET. IXXH30N60B3D1 may also be indicated for bipolar junction transistor (BJT) applications due to its lower operating value.

The working principle of IXXH30N60B3D1 is based on a metal oxide semiconductor insulated gate. It has two terminals, the collector terminal and the emitter terminal. The collector terminal of the IXXH30N60B3D1 is made of a lightly doped epitaxial layer of silicon. Uponvoltage application or gate signal, electrons move to the emitter terminal, enabling current conduction through the device.

Moreover, IXXH30N60B3D1 has very short on-state voltage drop which promises higher efficiency during operation. It has enhanced round-off current mitigation and high frequency switching capability, with fast turn-off capabilities and low total circuit losses. It also provides better immunity against high-dv/dt.

The IXXH30N60B3D1 IGBT is equipped with temperature sensor, overload protection and self-drive capability in addition to its high frequency switching capability. These protective features allow the device to be safely used in industrial and consumer applications. Its built-in protection circuit provide maximum safety and non-destructive system operations.

IXXH30N60B3D1 is designed to consume less energy, which makes it an environmentally friendly device. It also features a low switching loss and low noise operation, making it suitable to be used in silent electrical systems such as those in the medical industry.

IXXH30N60B3D1 IGBT is a powerful and reliable device for industrial and consumer applications. Its unique capabilities such as high efficiency, short on-state voltage drop, enhanced round-off current mitigation, low noise operation and more make it an ideal choice for many applications, ranging from industrial robots, solar energy systems to uninterruptible power supplies. Its high frequency switching capability and built-in protection circuits also make it a perfect choice for any situation where safety and durability are of utmost importance.

The specific data is subject to PDF, and the above content is for reference

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