IXXH40N65B4

Power - Max:	455W
Supplier Device Package:	TO-247 (IXXH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 40A, 5 Ohm, 15V
Td (on/off) @ 25°C:	28ns/144ns
Gate Charge:	77nC
Input Type:	Standard
Switching Energy:	1.4mJ (on), 560µJ (off)
Series:	GenX4™, XPT™
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 40A
Current - Collector Pulsed (Icm):	240A
Current - Collector (Ic) (Max):	120A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IXXH40N65B4 is a single IGBT transistor – an insulated gate bipolar transistor – that can be used in many different applications. Its high-voltage, low-loss capabilities make it suitable for power switching applications and other applications requiring high levels of power. In this article, we will discuss the typical application field and working principle of the IXXH40N65B4 transistor.

Application Field

The IXXH40N65B4 transistor has a high voltage and low loss capability, which makes it suitable for a variety of power switching applications in the industrial, communications, and consumer electronics fields. For example, it is commonly used in motor controllers, power regulators, and power supply circuits. Additionally, its high current and high-voltage capability makes it suitable for use in high-power applications such as power converters and power supplies.

Working Principle

The IXXH40N65B4 transistor works similarly to other IGBTs. It is a three-terminal device consisting of a gate, an emitter, and a collector. Electrons flows between the emitter and collector, while the gate controls the flow of the electrons. The gate is insulated from the emitter and collector, preventing any current flow between them and allowing the device to operate at high-voltage levels.When the gate voltage is increased, the transistor "turns on" and allows current to flow through the emitter and collector. conversely, when gate voltage is decreased, the transistor "turns off," and current flow is cut off. The gate voltage is typically controlled by an external switching circuit.

Conclusion

The IXXH40N65B4 is a single IGBT transistor with a high voltage and low loss capability, making it ideal for power switching applications. The transistor works in a similar manner to other IGBTs, with a gate controlling the flow of electrons between the emitter and collector. With its high current and voltage capability, the IXXH40N65B4 is suitable for use in a variety of applications, from motor controllers to power supplies.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description