IXXH60N65C4

Power - Max:	455W
Supplier Device Package:	TO-247 (IXXH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Test Condition:	400V, 60A, 5 Ohm, 15V
Td (on/off) @ 25°C:	37ns/133ns
Gate Charge:	94nC
Input Type:	Standard
Switching Energy:	3.2mJ (on), 830µJ (off)
Series:	GenX4™, XPT™
Vce(on) (Max) @ Vge, Ic:	2.2V @ 15V, 60A
Current - Collector Pulsed (Icm):	240A
Current - Collector (Ic) (Max):	118A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

The IXHH60N65C4 is a type of Insulated Gate Bipolar Transistor (IGBT), single element transistor. This transistor provides a high power efficiency and offers low conduction and switching losses, making it a highly stable and reliable device. It is primarily used in power switching applications where it acts as a power switch and/or control switch in order to control high power, which is safely and quickly controlled in applications. The IXHH60N65C4 IGBT gives an incredibly high frequency operation with a very low input capacitance. Its basic structure means that it can be used in both switching and linear applications. This makes the device extremely versatile, as it can operate in both the on-stage and off-stage environments. It is designed for high voltage and high current applications, making it ideal for various industrial applications.

Application Field

The IXHH60N65C4 is primarily used in high power switching circuits for a number of reasons. Firstly, it provides high temperature performance and long-term reliability. It can be used in a wide range of applications, such as telecommunications and power conversion. The IXHH60N65C4 is suited to applications requiring the integration of a switching and power control device. This includes motor control, UPS systems and renewable energy sources such as solar, wind and water. The main areas of application include power supplies, inverter control and motor control, with the large current capability of the IXHH60N65C4 making it suitable for these applications. The IXHH60N65C4 is also suitable for appliances requiring high power output, such as microwave ovens and power circuits. This IGBT can also be used in welding and other high power industrial applications. It is also suited to applications requiring motor control due to the high frequency operation and its low gate drive requirement.

Working Principle

The IXHH60N65C4 IGBT operates on the principle of a high voltage power switch with an insulated gate. This transistor is designed for high current and high voltage operations, making it suitable for applications such as power supplies, motor control and inverter control. At the heart of the IXHH60N65C4 is an insulated gate bipolar transistor (IGBT) which consists of two components: a small signal transistor (T1) and an insulated gate transistor (FET). The FET acts as the switch within the IGBT, while the T1 forms the path for current conduction. When the gate of the FET is driven by a current, it is able to control the current flow through the T1. For any switching application, the IXHH60N65C4 operates in one of two states. In the \'on-state\' the current flows, while in the \'off-state\' the current is blocked. In order to control the current flow, the gate voltage and current is adjusted. This control of the current flow is what makes the IXHH60N65C4 so useful for power conversions and motor control.

Conclusion

The IXHH60N65C4 IGBT is a single element transistor designed to provide a high power efficiency and low conduction and switching losses. This makes it suitable for a wide range of applications, from telecommunications and power conversions to motor control and UPS systems. Its basic structure gives it the versatility of being able to operate in both \'on-stage\' and \'off-stage\' environments. Additionally, it is designed for high voltage and high current applications which makes it perfect for high power welding and other industrial applications. The IXHH60N65C4 operates on the principle of an insulated gate bipolar transistor, with an insulated gate controlling the current flow. Its stability, reliability and efficiency make it an ideal choice for a variety of applications.

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