IXXH30N65B4D1

Input Type:	Standard
Supplier Device Package:	TO-247AD
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	65ns
Test Condition:	400V, 30A, 15 Ohm, 15V
Td (on/off) @ 25°C:	20ns/150ns
Gate Charge:	52nC
Series:	XPT™, GenX4™
Switching Energy:	1.04mJ (on), 730µJ (off)
Power - Max:	230W
Vce(on) (Max) @ Vge, Ic:	2.1V @ 15V, 30A
Current - Collector Pulsed (Icm):	146A
Current - Collector (Ic) (Max):	70A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	--
Part Status:	Active

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXXH30N65B4D1 transistor is an insulated gate bipolar transistor (IGBT), a semiconductor device that is composed of two distinct elements: an N-type conducting channel and an insulated gate. Each element has its own important functions that unite to create the IXXH30N65B4D1. This transistor is a single-package transistor, meaning that the two elements are housed in a single package. This type of transistor is particularly useful due to its ability to switch high currents with a low risk of failure or burning out.

Application Fields

The IXXH30N65B4D1 transistor is typically employed in applications that require the switch of high currents at a high frequency. As such, it is widely used in power supply circuits, UPS systems, and inverters. In addition, it can be found in the drive circuits of induction motors and motor control systems, in electric welding controllers and DC motor control systems, as well as in converters. This type of transistor is also well-suited for use in automotive applications, such as headlights, power windows, door locking systems, and hazard light control systems. In addition, the IXXH30N65B4D1 can be used in a variety of other applications, such as refrigeration and air conditioning systems, photovoltaic energy conversion systems, household appliances, etc.

Working Principle

The IXXH30N65B4D1 transistor works by using an insulated gate. This gate acts as an insulator, allowing electric charges to pass through, while preventing electric current from flowing. The voltage applied on the gate controls whether electric current is allowed to pass through the transistor. When a positive voltage is applied to the gate, an electric field is created, which allows electric current to pass through. When the voltage is removed from the gate, the electric field is no longer present and electric current cannot pass through the transistor. The electric current passing through the transistor is controlled by the voltage applied to the gate, allowing the user to precisely control the flow of current through the device.In addition, the IXXH30N65B4D1 features a high switching speed, allowing it to respond to voltage changes quickly. This makes it ideal for use in high-frequency applications, as it is able to switch high currents at high speeds with minimal risk of failure or burning out.Overall, the IXXH30N65B4D1 transistor is a powerful device that is able to switch high currents at high frequencies. Its ability to switch quickly and efficiently makes it well-suited for use in a variety of applications. From power supply circuits to automotive applications and beyond, the IXXH30N65B4D1 is a reliable and durable transistor that offers excellent performance in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description