IXXH30N65C4D1 Allicdata Electronics
Allicdata Part #:

IXXH30N65C4D1-ND

Manufacturer Part#:

IXXH30N65C4D1

Price: $ 3.12
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT
More Detail: IGBT 650V 62A 230W Through Hole TO-247AD
DataSheet: IXXH30N65C4D1 datasheetIXXH30N65C4D1 Datasheet/PDF
Quantity: 1000
30 +: $ 2.82786
Stock 1000Can Ship Immediately
$ 3.12
Specifications
Input Type: Standard
Supplier Device Package: TO-247AD
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 72ns
Test Condition: 400V, 30A, 15 Ohm, 15V
Td (on/off) @ 25°C: 20ns/140ns
Gate Charge: 47nC
Series: XPT™, GenX4™
Switching Energy: 1.1mJ (on), 400µJ (off)
Power - Max: 230W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Current - Collector Pulsed (Icm): 136A
Current - Collector (Ic) (Max): 62A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Part Status: Active
Description

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The IXXH30N65C4D1 is an insulated gate bipolar transistor (IGBT). It is a component commonly employed to control power in a circuit, as it is both able to switch power on/off and manage higher voltage and current levels compared to other transistors. IXXH30N65C4D1 transistors are a type of single IGBT.

IXXH30N65C4D1 transistors have a number of applications. Amongst these, toggling the power of motors can be particularly beneficial; the speed and power of the motor can be switched on/off and managed for smoother operation. As a result, IXXH30N65C4D1 transistors are typically employed in motor controllers and electric motor drives such as in industrial robotics and automated machine tools.

The IXXH30N65C4D1 also has an application in generating high voltage pulses. Due to their forward voltage drop, they can be employed to boost voltage electrical pulses to a higher level quickly and accurately. As a result, IXXH30N65C4D1 transistors are becoming increasingly popular in pulse welding machines, lasers and X-ray generators.

The working principle of the IXXH30N65C4D1 is based on the characteristics of an n-type semiconductor. It consists of two layers of semiconductor material; an n-type layer at the bottom and a p-type layer at the top. This creates a P-N junction, which prevents the flow of current in either direction. By applying an electrical field to the circuit, the junction creates a conducting channel through the n-type layer, allowing the transistor to become ‘turned on’. The voltage applied can be used to control the current through the channel.

To switch off the charge, the current has to be reversed, or the voltage can be increased. By toggling the gate pin on and off, the transistor can switch between ‘on’ and ‘off’ states quickly, allowing the power in the circuit to be managed accurately. When the voltage applied to the P-N junction is below the breakdown voltage of the transistor, it enters its off state.

In summary, the IXXH30N65C4D1 is a single IGBT transistor deployed primarily to control power in an electrical circuit. It can be used to switch the power in motors, as well as generating high voltage pulses to accurately boost the voltage of electrical pulses. The transistor works by creating a P-N junction and allowing the flow of current. By toggling the gate pin of the transistor on and off, it can be switched between on and off states quickly, allowing for accurate management of the power.

The specific data is subject to PDF, and the above content is for reference

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