IXXH75N60C3D1

Power - Max:	750W
Supplier Device Package:	TO-247AD
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	25ns
Test Condition:	400V, 60A, 5 Ohm, 15V
Td (on/off) @ 25°C:	35ns/90ns
Gate Charge:	107nC
Input Type:	Standard
Switching Energy:	1.6mJ (on), 800µJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 60A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	150A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction of IXXH75N60C3D1

The IXXH75N60C3D1 is a MOS-controlled thyristor (MCT) developed by Infineon Technologies, which can replace the traditional thyristor or IGBT and greatly reduce the size and increase the efficiency of the system. It is a voltage controlled power device integrated in one single package and is ideal for a wide range of industrial applications, including home appliances, UPS systems, automatic machines and consumer electronics.

Application Field

The IXXH75N60C3D1 is a power device that is primarily used in industrial applications such as home appliances, UPS systems, automatic machines and consumer electronics. Due to its small size and high efficiency, it can be used in a variety of systems such as motor drives, converters, motor control, soft starters and DC link applications.The IXXH75N60C3D1 is suitable for medium current applications up to 75A, such as motor drives, converters and soft starters. It can also be used in high current, low voltage applications like DC link applications where high power converters and industrial controls are used.

Working Principle

The working principle of the IXXH75N60C3D1 is based on the MOSFET structure. It is composed of a body diode and two source-gate MOS transistors that are connected back-to-back to form a thyristor. The MOS transistors are designed to be fast switching, so that when the gate voltage is applied, the thyristor is capable of switching from off to on in a fraction of a millisecond. Because the MOS transistors are connected back-to-back, current can flow in both directions.On the supply side, the IXXH75N60C3D1 has two terminals: the anode, and the gate. When the anode is connected to the supply circuit and is given a floating voltage, an electric field will be created between the anode and gate terminals. When the gate voltage is applied, the electric field will be further enhanced, allowing the current to flow from the anode to the gate. The gate will then turn on the two MOS transistors, allowing current to flow from the supply to the load.

Conclusion

The IXXH75N60C3D1 is a power device used in industrial applications such as home appliances, UPS systems, automatic machines and consumer electronics. It is a voltage controlled MOS-controlled thyristor that can switch on and off in a fraction of a millisecond and is ideal for applications such as motor drives, converters, motor control, soft starters and DC link applications. The working principle of the IXXH75N60C3D1 is based on the MOSFET structure and when the gate voltage is applied, the MOS transistors are turned on and current flows from the supply to the load.

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