IXXH60N65B4H1 Allicdata Electronics
Allicdata Part #:

IXXH60N65B4H1-ND

Manufacturer Part#:

IXXH60N65B4H1

Price: $ 5.29
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 650V 116A 380W TO247AD
More Detail: IGBT PT 650V 116A 380W Through Hole TO-247 (IXXH)
DataSheet: IXXH60N65B4H1 datasheetIXXH60N65B4H1 Datasheet/PDF
Quantity: 31
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 5.29200
10 +: $ 5.13324
100 +: $ 5.02740
1000 +: $ 4.92156
10000 +: $ 4.76280
Stock 31Can Ship Immediately
$ 5.29
Specifications
Power - Max: 380W
Supplier Device Package: TO-247 (IXXH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 150ns
Test Condition: 400V, 60A, 5 Ohm, 15V
Td (on/off) @ 25°C: 37ns/145ns
Gate Charge: 95nC
Input Type: Standard
Switching Energy: 3.13mJ (on), 1.15mJ (off)
Series: GenX4™, XPT™
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Current - Collector Pulsed (Icm): 230A
Current - Collector (Ic) (Max): 116A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXXH60N65B4H1 is an insulated gate bipolar transistor (IGBT) designed for applications up to 600 volts. This transistor is designed specifically for full-bridge and 3-phase inverter drives. The IXXH60N65B4H1 is capable of delivering up to 250 amperes of continuous current and can switch up to 1 kilowatt of power. It also offers excellent thermal characteristics.

The IXXH60N65B4H1 is a single-channel IGBT constructed with the NPT IGBT technology. This transistor has a maximum collector-emitter voltage (VCE) of 600 volts and a maximum collector current (IC) of 250 amps. This device is also capable of switching frequencies up to 5 kHz. The IXXH60N65B4H1 has a base drive voltage of 5 volts, which makes it ideal for applications where space and/or power is at a premium. This device also features low-power MOSFET on-state resistance and is capable of handling short-circuit and overcurrent conditions.

The IXXH60N65B4H1 is capable of full-bridge and distributed drive applications, such as motors, solenoids, relays, and plasma generators. It can be used as an H-bridge solution in three-phase motor drives, or as a single-channel switching component in unipolar and bipolar motor drives. The IXXH60N65B4H1 can also be used in position control and other electro-mechanical devices.

The IXXH60N65B4H1 working principle is relatively simple; it acts as an electronic switch, which is opened and closed by changing the gate voltage. When a sufficient voltage is applied to the gate, the electromagnetic field generated activates the electrons in the IGBT chip, allowing the current to pass through. When the gate voltage is removed, the electrons are pulled back and the circuit is switched off. This is based on the concept of carrier injection, which is the fundamental building block used in the IGBT gate structure.

The IXXH60N65B4H1 is a workhorse of the power electronics industry; it is used in a number of applications ranging from motor drives to solar inverters. It is also versatile enough to be used in a variety of different circuit topologies. The IXXH60N65B4H1 is a reliable, dependable, and well-performing device, making it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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