IXXH75N60B3D1

Power - Max:	750W
Supplier Device Package:	TO-247 (IXXH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	--
Reverse Recovery Time (trr):	25ns
Test Condition:	400V, 60A, 5 Ohm, 15V
Td (on/off) @ 25°C:	35ns/118ns
Gate Charge:	107nC
Input Type:	Standard
Switching Energy:	1.7mJ (on), 1.5mJ (off)
Series:	GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic:	1.85V @ 15V, 60A
Current - Collector Pulsed (Icm):	300A
Current - Collector (Ic) (Max):	160A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Single IGBT (Insulated Gate Bipolar Transistor) Application Fields and Working Principles

Single IGBTs (Insulated Gate Bipolar Transistors) are three-terminal power semiconductor devices, an evolution of the standard bipolar transistor where the traditional two-layer base previously present has been replaced with an insulated field layer (more commonly referred to as an “oxide or dielectric” layer) located between the collector and gate.The development of single IGBTs has been instrumental in advancing the technology used in various sectors today. Their fast switching speeds, linear characteristics, and low price combined with its ability to handle high power make them a popular choice in a variety of applications. IGBTs have found a wide range of applications such as gaming machines, audio equipment, printer controllers, industrial automation, lighting systems, medical equipment, power tools, ventilation systems, elevated railways, and home appliance control systems. Their ability to control voltage and current enables in the production of controllable electromagnets, which are commonly used in nuclear power plants as they require devices which can be triggered by a distant control board and provide a high level of safety and security. They are also found in digital communications systems being used as high-speed drivers capable of switching voltages more rapidly than transistors with the added benefits of low losses and high efficiency. From the technical perspective, single IGBTs operate slightly different than a standard junction transistor. The IGBT is composed of two structures in one, a diode and a field effect transistor. The diode is located in between the collector and drain and turns on the gate when a certain voltage is conducted over it.This voltage makes it so electrons can move from the drain to the collector therefore allowing the current to flow through the transistor. Another difference is that with IGBTs, a separate gate signal is not required for turn-on. The current can be increased or decreased by adjusting the voltage. This feature allows for efficient power amplifications in applications such as motor control, adjustable speed drives, and power supplies. Also, due to the gate to source voltage that is required to activate the device, the single IGBT can be driven by microcontrollers or any other type of low voltage circuits.In summary, single IGBTs are three legged semiconductor devices with a wide range of applications due to their versatile features. These include their fast switching speed, linear characteristic and low price alongside with their ability to handle high power. They are used in industries and consumer products as an efficient way to control and amplify current and voltage. Their structure provides them with a high level of safety and security when used in nuclear power plants as they can be triggered by remote sources, while also offering high switching speeds when used in digital communication systems. With the advancements being made in the semiconductor industry, single IGBTs have become an invaluable tool and will continue to be so in the foreseeable future.

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