IXXH80N65B4

Series:	GenX4™, XPT™
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	PT
Voltage - Collector Emitter Breakdown (Max):	650V
Current - Collector (Ic) (Max):	160A
Current - Collector Pulsed (Icm):	430A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 80A
Power - Max:	625W
Switching Energy:	3.77mJ (on), 1.2mJ (off)
Input Type:	Standard
Gate Charge:	120nC
Td (on/off) @ 25°C:	38ns/120ns
Test Condition:	400V, 80A, 3 Ohm, 15V
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247 (IXXH)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

The IXXH80N65B4 is a single, insulated gate bipolar transistor (IGBT). It is one of the most advanced and reliable semiconductor devices in the field of power electronics. In power switching applications, it is ideal for those situations where both high speed and low losses are required. The IXXH80N65B4 has a wide range of applications ranging from high-performance motor controllers to fast-switching rectifiers. It is also often used in AC/DC converters, inverter circuits, high-efficiency systems, UPS systems, solar systems, and charging applications.

Applications

The IXXH80N65B4 is primarily used in power switching applications. It is especially well-suited for those scenarios where both high speed and low losses are needed. This makes it ideal for applications such as emergency lighting, fast-switching rectifiers, and switching circuits with short-term power requirements. The IXXH80N65B4 is also often used in DC choppers, AC/DC converters, inverter circuits, and hybrid power control circuits.

Features and Benefits

The IXXH80N65B4 has a number of features and benefits that make it the ideal choice for power switching applications. It has an extended temperature range of -50°C to +150°C, a low-power gate drive (1A at 12V) and a low forward voltage drop (Vce(sat) = 2.2V at 10A). It also has high current and voltage ratings, which make it suitable for the most demanding applications. Additionally, the IXXH80N65B4 has a small overall size, which makes it ideal for small form factor projects.

Working Principle

The IXXH80N65B4 is an insulated gate bipolar transistor. This type of transistor is composed of two distinct components. The first is an insulated gate field-effect transistor (IGFET), which is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) with an insulated gate electrode. The second is a bipolar junction transistor (BJT). The IGFET serves as the control element while the BJT provides the switching action. When the gate voltage of the IXXH80N65B4 is low (below the threshold voltage) it acts as an open switch, allowing no current to pass through. When the gate voltage is high (above the threshold voltage) the transistor is in a conducting state and current flows through it, depending on the load and the characteristics of the circuit.

Conclusion

The IXXH80N65B4 is a single, insulated gate bipolar transistor (IGBT). It is one of the most advanced and reliable semiconductor devices in the field of power electronics. The IXXH80N65B4 has a wide range of applications ranging from high-performance motor controllers to fast-switching rectifiers. Additionally, it has a number of features and benefits such as a low-power gate drive, a low forward voltage drop, and high current and voltage ratings, which make it ideal for a variety of applications. The IXXH80N65B4 is an insulated gate bipolar transistor composed of an IGFET serving as the control element and a BJT providing the switching action.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description