IXXH50N60C3 Allicdata Electronics
Allicdata Part #:

IXXH50N60C3-ND

Manufacturer Part#:

IXXH50N60C3

Price: $ 4.88
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 100A 600W TO247AD
More Detail: IGBT PT 600V 100A 600W Through Hole TO-247 (IXXH)
DataSheet: IXXH50N60C3 datasheetIXXH50N60C3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 4.43436
Stock 1000Can Ship Immediately
$ 4.88
Specifications
Power - Max: 600W
Base Part Number: IXX*N60
Supplier Device Package: TO-247 (IXXH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Test Condition: 360V, 36A, 5 Ohm, 15V
Td (on/off) @ 25°C: 24ns/62ns
Gate Charge: 64nC
Input Type: Standard
Switching Energy: 720µJ (on), 330µJ (off)
Series: GenX3™, XPT™
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXXH50N60C3 is an Insulated Gate Bipolar Transistor (IGBT) belonging to the single type category. It is used for a wide variety of purposes, including industrial automation, motor control, and medical equipment. Its key features include low gate drive power, low on-state losses, and fast switching speeds.

As its name suggest, an IGBT is a type of transistor which combines the features of two different types of transistors. Specifically, it combines the high-current and low-voltage capabilities of a Bipolar Junction Transistor (BJT) with the high-input resistance and low-power characteristics of a Field Effect Transistor (FET). This gives the IGB a wide range of power control options and makes it applicable to many different industrial applications.

The IXXH50N60C3 is specifically designed to have low on-state losses and is capable of operating at extremely low switching frequencies. Additionally, it offers excellent pulse performance which makes it well-suited for applications such as motor control and high-performance switching. The device also has a low gate drive power which makes it a cost-effective option for low-voltage control applications.

The IXXH50N60C3 works by combining the high-performance characteristics of a BJT and FET. When the IGBT is in the OFF state, its collector–emitter path is terminated by the FET. However, as soon as a gate current is applied to the IGBT, the transistor becomes ‘ON’, and the collector–emitter path is terminated by the BJT. This allows for a fast switching response and a high input impedance.

The different switching characteristics of the IXXH50N60C3 make it a suitable choice for a range of different applications. It is commonly used in industrial automation, motor control, inverters, and medical equipment. Its low on-state losses, fast switching speeds, and excellent pulse performance make it an ideal choice for applications which require precise power control.

The IXXH50N60C3 is a widely used and highly versatile IGBT. It is capable of operating in a variety of different industrial applications and offers excellent performance for both low-voltage and high-performance applications. Its low on-state losses and fast switching speeds make it suitable for use in many different industrial applications. Additionally, its low gate drive power makes it a cost-effective choice for low-voltage control applications.

The specific data is subject to PDF, and the above content is for reference

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