IXXH80N65B4H1 Allicdata Electronics
Allicdata Part #:

IXXH80N65B4H1-ND

Manufacturer Part#:

IXXH80N65B4H1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 650V 160A 625W TO247AD
More Detail: IGBT PT 650V 160A 625W Through Hole TO-247 (IXXH)
DataSheet: IXXH80N65B4H1 datasheetIXXH80N65B4H1 Datasheet/PDF
Quantity: 610
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 610Can Ship Immediately
Specifications
Series: GenX4™, XPT™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: PT
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 160A
Current - Collector Pulsed (Icm): 430A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Power - Max: 625W
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Input Type: Standard
Gate Charge: 120nC
Td (on/off) @ 25°C: 38ns/120ns
Test Condition: 400V, 80A, 3 Ohm, 15V
Reverse Recovery Time (trr): 150ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 (IXXH)
Description

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The IXXH80N65B4H1 is a Power MOSFETs and IGBTs in one package device constructed using the latest generation of Trench Field-Stop IGBT technology. This device combines an Insulated Gate Bipolar Transistor (IGBT) with a Power MOSFET in a single-package construction. It offers very low on-state resistance, high frequency operation and minimal switching losses. The IXXH80N65B4H1 provides excellent thermal performance, robustness and high avalanche ruggedness. In addition, this transistor features a soft level of dV/dt immunity, reverse blocking capability and a high degree of controllability.

The main application fields of the IXXH80N65B4H1 are in power control and switching applications. The device is well suited for applications such as motor control, rectification, and auxiliary supply of a wide range of power devices. This power transistor can be used in a variety of switching applications such as lighting, computer main supplies, appliances, welding and SMPS. Other applications include power supply, solar inverters and drives.

The working principle of the IXXH80N65B4H1 is based on a metal-oxide-semiconductor field-effect transistor (MOSFET) and an insulated gate bipolar transistor (IGBT). It is designed to provide a high degree of controllability and low on-state resistance. MOSFETs are used in the IXXH80N65B4H1 to control the voltage and current, while the IGBTs are used for high currents. The IXXH80N65B4H1 provides excellent thermal performance, robustness and high avalanche ruggedness thanks to its package construction. The performance characteristics of the device make it ideal for power switching and control applications.

The IXXH80N65B4H1 is ideal for switching and control applications where the power requirements are high. This device offers a high degree of controllability, low on-state resistance, excellent thermal performance and robustness thanks to its package construction. Additionally, it provides a soft level of dV/dt immunity, reverse blocking capability and a high degree of controllability. All these features make this device suitable for a wide range of power control and switching applications.

The specific data is subject to PDF, and the above content is for reference

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