IXXH60N65B4

The IXFH60N65B4 is an Integrate Gate Bipolar Transistor (IGBT) belonging to the family of Single IGBTs. It is suitable for use in many different applications due to its high voltage and current ratings and low on-state resistance. This article will describe the IXFH60N65B4 application field and principles of operation.

Applications

The IXFH60N65B4 is designed for use in applications such as motor control and inverter phase switching, such as motor drives, traction and uninterruptible power supplies (UPS), as well as industrial drives. As high-frequency switching is one of the major advantages of this device, it can also be used in dc-dc power converters. Due to its suitable isolation and protections, it can also be employed in high-side switching applications, such as automotive powertrain systems.

Electrical Parameters

The IXFH60N65B4 offers a high current rating of 60A and voltage rating of 650V. It also features a low on-state resistance of 0.99 Ω, which helps reduce losses in the power circuit. In terms of frequency, the device is suitable for operation at frequencies up to 10 kHz.

Features

The IXFH60N65B4 offers an improved parasitic latch-up immunity, compared to conventional IGBTs. This, in turn, improves the system reliability during operation. Additionally, the device boasts of an exceptionally low gate charge (Qg), which helps reduce power dissipation during the switch operation. The device also offers a fast switching time of 7µs.

Package

The IXFH60N65B4 is provided in a D2pak package, which provides enhanced thermal conductivity and mechanical strength, thus allowing for a compact, robust design.

Working Principle

The IXFH60N65B4 utilizes two oppositely biased terminals which are connected to a substrate. These two electrodes are referred to as the collector and emitter respectively. The gate terminal is used to modulate the current flow between the emitter and collector. When a positive gate voltage is applied, the device is in conductive state, allowing current flow between the emitter and collector terminals. However, when a negative gate voltage is applied, the device is in non-conductive state, preventing current flow between the two terminals.

Advantages

The IXFH60N65B4 is a highly efficient device, as it enables efficient power conversion for various applications with low losses. It also provides high-frequency-switching capabilities and improved noise immunity. Moreover, it is designed for use in high-side switching applications such as motor phase switching and motor control.

Conclusion

The IXFH60N65B4 is a highly efficient and reliable device, which is suitable for high-voltage, high-current applications such as motor phase switching and motor control. It features an improved parasitic latch-up immunity and low on-state resistance, making it an ideal choice for cost-effective power conversion. Furthermore, its compact D2pak package allows for easy mounting and positioning in various applications.