IXXH30N60C3D1

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The IXXH30N60C3D1 is a single high-voltage Insulated Gate Bipolar Transistor (IGBT). An IGBT is a three-terminal power semiconductor device, wherein the control input (gate) is insulated from the main terminal (collector) providing the switching action. It combines the voltage handling capability of a MOSFET and the current handling capability of a bipoar transistor in the same package. It is often used for switching applications, such as motor control, lighting control, solar inverters, power supplies and motor drives, etc.

Application Field

The IXXH30N60C3D1 is commonly used in high power applications, such as solar inverters, AC motor control and lighting control. It supports applications with high voltage requirements up to 600V and high current up to 30A. It is often used as a bridge switch mode rectifier, and is suitable for applications requiring a combination of fast switching and low conduction losses. It is also suitable for hard switching and resonant converter applications, as well as many other power control applications.

Working Principle

The IXXH30N60C3D1 consists of three terminals (collector, emitter and gate). The collector terminal is connected to the load, and the emitter terminal is connected to the input voltage of the power supply. When the gate terminal is forward biased, the transistor is turned on and current in the collector-emitter channel is allowed to flow. This makes the load current to be close to the input current of the power supply, and it is also used to operate components on the load side of the IGBT. In this way, the IXXH30N60C3D1 acts as a switch to control the load current.

When the gate current decreases, the transistor turns off an

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