JS28F00AP30EF0

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a vital component in an electronic system and is required to store data. The JS28F00AP30EF0 is a non-volatile memory device which offers fast access times and low power consumption. This article will discuss the application field and working principle of the JS28F00AP30EF0.

Introduction

The JS28F00AP30EF0 is a non-volatile memory device manufactured by Micron Technology. It is a small form factor memory device which is ideal for applications that require fast access times and low power consumption. The device offers up to 2048Mbits of non-volatile memory storage. It is available in multiple densities, including 128 megabits, 256 megabits and 512 megabits. It is also compatible with industry-standard interfaces, such as SPI and Quad-SPI.

Application Field

The JS28F00AP30EF0 is ideal for applications that require fast access times and low power consumption. It is well suited to embedded applications, such as industrial control, automotive, medical and other applications. It can also be used in consumer electronics and mobile devices, such as smartphones and tablets, to provide additional storage capacity.

The device is also suitable for data storage applications, such as data logging, security systems and access control. It can be used in communication systems, including 4G and 5G networks, to store configuration data. It is also used in applications that require reliable storage of important data, such as code, settings and other critical information.

Working Principle

The JS28F00AP30EF0 uses Static random-access memory (SRAM) technology to store data in non-volatile memory cells. The device features a memory array that can store up to 2,048 megabits of data. It is organized in 8 bits and supports up to 128-bit wide data transfers. The device also features a fast read/program instruction set. This enables it to achieve high-speed read and write operations.

The device also has built-in Error Correction Code (ECC) to detect and correct single and double-bit errors during read and write operations. This helps ensure the data stored in the device is accurate and reliable. The device also features a built-in global write-protection to prevent accidental data corruption or programming errors. This can be used in applications where data integrity is critical.

The JS28F00AP30EF0 is a low power device which can be used in battery-powered and energy-saving applications. The device features an automatic power-down mode which reduces power consumption when the device is not in use. The device also has a low-voltage operation range, from 1.4V to 3.6V, which enables it to be used in low-voltage applications.

Conclusion

The JS28F00AP30EF0 is a non-volatile memory device which offers fast access times and low power consumption. The device is ideal for embedded, consumer and data storage applications, including industrial controls, communications systems, medical devices and access control systems. The device uses SRAM technology to store data and features built-in ECC and write-protection to ensure data integrity. The device also has a low-voltage operation range and features an automatic power-down mode for energy-saving applications.

The specific data is subject to PDF, and the above content is for reference