JS28F256P33BFE

JS28F256P33BFE is a memory device is a highly integrated, low-voltage, high-speed non-volatile phase-change memory device. The phase-change memory cell structure used in TS28F256P33BFE can be electrically programmed in four state levels, which offers increased data storage capacity per cell. The device combines the advanced phase-change storage process with standard CMOS circuitry for efficient control. The TS28F256P33BFE is manufactured in 65 nm CMOS technology and offers a 32x256x 8 bit configuration (8192 bits).

Application Field:

The TS28F256P33BFE is suitable for various applications where high density, non-volatile storage and fast read/write access are needed. Such applications include automotive, military, medical, and other mobile applications. It can be used for storing applications such as code, calibration, configuration, and data. The TS28F256P33BFE is particularly suited for applications requiring longterm data storage (calibration data) and fast access, while offering minimal power consumption.

Working Principle:

The TS28F256P33BFE is a phase-change memory device which stores data in a non-volatile manner. Data is stored in terms of 4 state levels and the device requires only a single voltage level (1.8 - 3.3V) and the access time is very fast. In order to read, erase, and write the data, the device must be put into the appropriate mode.

To read the data, the mode pin is set to “READ” and data is retrieved from memory cells. To erase the data, the mode pin is set to “ERASE” and memory cells are erased. To write the data, the mode pin is set to “WRITE” and data is written to the memory cells.

The TS28F256P33BFE is also capable of endurance and retention operations. An endurance operation is a write operation and consists of several erase and write cycles. A retention operation is a read operation and consists of a refresh cycle to maintain data reliability for a given period of time.

The TS28F256P33BFE is a non-volatile storage device which offers high-speed, non-volatile storage, with minimal power consumption. Its suitable for various applications requiring high density, non-volatile storage and fast read/write access.