JS28F640J3F75A

JS28F640J3F75A Application Field and Working Principle

The JS28F640J3F75A belongs to the family of non-volatile flash memories, specifically the NOR- Flash category. It is a cost-effective, reliable and advanced memory device, consisting of a large number of floating gate transistors. This type of memory is widely used in embedded systems such as consumer electronics, cellular phones and other mobile devices, as well as medical, industrial and automotive applications. The device has a wide range of features, including high-read, high-write speed and low power consumption.

The JS28F640J3F75A is a 3V NOR Flash device and is capable of operating at advanced clock frequencies, achieving a fast read speed of up to 133Mbps. The device also comes with a unique transmit enable lock feature, which allows for easy protection of data against unwanted access.

The architecture of the JS28F640J3F75A memory device consists of two NAND gates and a single Level-2 page buffer. One NAND gate is responsible for the program and erase operations while the other is responsible for the random read and write operations. The Level-2 page buffer is used to store the program and erase data during the operations. Both the NAND and Level-2 page buffer are connected to a common bus, enabling all data transfer between the two. Additionally, the device includes multiple banks, which enable simultaneous read and write operations.

The working principle of the JS28F640J3F75A is based on the floating gate transistor technology. A single floating gate transistor is made up of two parts; a source electrode, located at one end and the drain electrode, located at the other end. In between the two, is a thin layer of insulation, referred to as an oxide layer. When voltage is applied across the two electrodes, minority carriers, or electrons, are trapped in the oxide layer. This change in charge modifies the transistor’s ability to conduct current, allowing it to be operated in one of two possible states. This principle is used in the JS28F640J3F75A to store data.

The JS28F640J3F75A device is capable of performing 4-bit program and erase operations. When programming the memory, electrons are injected into the floating gate of the transistors and the cell is then written by applying a voltage. To erase a cell, the inverse process is carried out. Electrons are removed from the floating gate and then the cell is cleared with the help of a negative voltage.

The JS28F640J3F75A memory is a reliable and extremely fast non-volatile memory device. Its high read and write speeds, along with its low power consumption, make it a perfect choice for various embedded systems and applications. Additionally, the device includes an in-field programmable feature, which makes it easy to update firmware and other data.